Allicdata Part #: | FZ1600R17KF6CB2NOSA1-ND |
Manufacturer Part#: |
FZ1600R17KF6CB2NOSA1 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT A-IHM130-1 |
More Detail: | IGBT Module 2 Independent 1700V 2600A 12500W Chas... |
DataSheet: | FZ1600R17KF6CB2NOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 0.63000 |
Series: | -- |
Part Status: | Last Time Buy |
IGBT Type: | -- |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 2600A |
Power - Max: | 12500W |
Vce(on) (Max) @ Vge, Ic: | 3.1V @ 15V, 1600A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 105nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FZ1600R17KF6CB2NOSA1 is a type of Insulated Gate Bipolar Transistor (IGBT) module that is typically used in energy-efficient power converters or motor control applications. It is designed to be used in high-speed switching applications where a large load is constantly varying or being driven. This module features excellent thermal stability, very low switching losses, and high efficiency.
An IGBT is a type of transistor that combines the best features of both bipolar transistors and MOSFETs. It has the low ON-resistance of a MOSFET and the fast switching speed of a bipolar transistor. By combining these two types of transistors into a single device, IGBTs are able to provide the necessary performance for high-speed switching applications.
The FZ1600R17KF6CB2NOSA1 module is made up of two discrete IGBTs connected in a half-bridge configuration. It has a maximum voltage rating of 1,600V and a current rating of 17A. This low-inductance module also has a nominal voltage rating of 1,200V and a maximum switched frequency of 6kHz. The module also has a maximum collector-emitter breakdown voltage of 1,000V and a nominal junction temperature of 137°C.
To use the FZ1600R17KF6CB2NOSA1 module, it must first be connected in a circuit. The most common configuration is to use the two IGBTs in a half-bridge configuration. In this configuration, one IGBT is connected as the upper switch, while the other is connected as the lower switch. The two IGBTs are then connected to their respective power sources, with the upper switch connected to a positive voltage source and the lower switch connected to a negative voltage source.
Once connected in a circuit, the FZ1600R17KF6CB2NOSA1 module works by controlling the flow of current through the transistors. When a voltage is applied to the control terminal, a current passes through the IGBTs, thereby causing them to switch on. The current then passes through the load, which is typically a motor in a motor control application. The current can then be reversed by reversing the polarity of the voltage applied to the control terminal, thus allowing the load to be driven in either direction.
The FZ1600R17KF6CB2NOSA1 module is an ideal choice for applications that require a fast-switching, low-loss power device. It is used in motor control applications, UPS systems, and inverter drives, to name a few. With its high efficiency, low losses, and excellent thermal stability, the FZ1600R17KF6CB2NOSA1 module is a reliable choice for power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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