Allicdata Part #: | 1560-1023-5-ND |
Manufacturer Part#: |
GDP30D120B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | DIODE SCHOTTKY 1200V 15A TO247-3 |
More Detail: | Diode Array 1 Pair Common Anode Silicon Carbide Sc... |
DataSheet: | GDP30D120B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Amp+™ |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Anode |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io) (per Diode): | 15A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 15A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 1200V |
Operating Temperature - Junction: | -55°C ~ 135°C |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
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Diodes - Rectifiers - Arrays encompass a wide range of components used to control DC power. A primary application of these devices is to provide control of input current to prevent the electrical systems from becoming overloaded. The most commonly used devices are diodes, rectifiers, and arrays. The purpose of this article is to describe the application field and working principle of the GDP30D120B device.
Application Field of GDP30D120B
The GDP30D120B is a thin-film esaki diode array. It is used to provide a high power rectification and power supply control. The device can be used in solar PV systems, DC-DC converters, automotive electronics, and other applications. The device has a maximum current rating of 30 amps and a typical forward voltage drop of 0.3 volts. It has a wide operating temperature range of -55°C to +150°C.
Working Principle of GDP30D120B
The GDP30D120B utilizes the principle of esaki tunneling. This is a quantum mechanical phenomenon that allows electrons to pass through thin layers of materials. The thin-film esaki diode is designed so that electrons travel in a zigzag path between two terminals. This zigzag path creates a high power density and low voltage drop across the device. The tunneling effect reduces the forward voltage drop of the diode and increases its overall efficiency. Due to this effect, the device is able to rectify higher voltages than other conventional diodes. The device also has a low reverse leakage current.
Conclusion
The GDP30D120B is a thin-film esaki diode array designed for use in high power rectification and power supply control applications. It has a maximum current rating of 30 amps, a typical forward voltage drop of 0.3 volts, and a wide operating temperature range of -55°C to +150°C. It utilizes the principle of esaki tunneling, which reduces the forward voltage drop of the diode and increases its efficiency. The device is ideal for solar PV systems, DC-DC converters, and automotive electronics applications.
The specific data is subject to PDF, and the above content is for reference
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