GDP30P120B Allicdata Electronics
Allicdata Part #:

1560-1024-5-ND

Manufacturer Part#:

GDP30P120B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: DIODE SCHOTTKY 1200V 81A TO247-2
More Detail: Diode Silicon Carbide Schottky 1200V 81A Through H...
DataSheet: GDP30P120B datasheetGDP30P120B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Amp+™
Packaging: Tube 
Part Status: Obsolete
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 81A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 1790pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C
Description

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A GDP30P120B diode is a rectifying diode in the single diode category, and is an ideal low power solution for industrial and automotive applications. GDP30P120B Single Diodes offer good performance at very low forward voltages and low reverse power consumption. The GDP30P120B Single Diodes are available with a range of forward and reverse voltages, making them ideal for a wide range of applications.

GDP30P120B devices are particularly well-suited for automotive and industrial applications, where power consumption is a critical issue. The GDP30P120B diode has the ability to switch high-current loads with low conduction losses and minimum power dissipation, resulting in the improved performance and reliability of the application. GDP30P120B Single Diodes are also ideal for general-purpose switching applications where a low forward voltage drop and low reverse current are important.

The GDP30P120B Single Diode is a high-performance, power-efficient rectifying diode that is extremely popular in various industries. The diode is designed to operate at low forward voltages and low reverse power consumption. It offers good performance in both forward and reverse bias mode, making it an ideal choice for automotive and industrial applications that require low power dissipation.

The working principle of the GDP30P120B Single Diode is based on the PN junction diode. This diode is a semiconductor material with an intrinsic layer formed between the anode and the cathode. In forward bias, the PN junction forms a low resistance path for current flow. On the other hand, in reverse bias, the PN junction is in a high resistance state and very little current flows.

When the GDP30P120B single diode is connected in the forward bias mode, the diode acts as a low resistance path, allowing current to flow in the forward direction. When the diode is connected in the reverse bias mode, it acts as a high resistance, blocking any current flow in the reverse direction. This makes the diode ideal for use in various applications, ranging from automotive to industrial applications.

The GDP30P120B Single Diode is a very reliable and efficient power-efficient rectifying diode, making it perfect for applications requiring low voltage operation and low reverse power consumption. The device features a low forward voltage drop and low reverse current, making it an ideal choice for both automotive and industrial applications. Due to its high performance and low power consumption, the device is becoming increasingly popular in the power electronics market.

The specific data is subject to PDF, and the above content is for reference

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