GDZ10LP3-7 Discrete Semiconductor Products |
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Allicdata Part #: | GDZ10LP3-7DITR-ND |
Manufacturer Part#: |
GDZ10LP3-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER DFN0603-2 |
More Detail: | Zener Diode 10V 250mW ±5% Surface Mount X3-DFN0603... |
DataSheet: | GDZ10LP3-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±5% |
Power - Max: | 250mW |
Current - Reverse Leakage @ Vr: | 200nA @ 7V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 0201 (0603 Metric) |
Supplier Device Package: | X3-DFN0603-2 |
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GDZ10LP3-7 Application Field and Working Principle
The GDZ10LP3-7 is a high performance Zener diode designed for general purpose applications. Its reverse-bias Zener breakdown voltage is between 3.6 and 4.2V which makes it suitable for voltage regulation, voltage surge protection, overvoltage protection and other circuit protection functions.
The GDZ10LP3-7 was developed using a multi-layer structure with a epitaxial substrate, allowing it to achieve excellent characteristics. It has high reliability, good reverse leakage current and low noise. The system design requires an understanding of the device\'s application field, working principle and characteristics.
Application Field
The device can be used in the following applications:
- High power output
- Lighting systems and visual displays
- Voltage regulator
- Overvoltage protection
- Power supply powering
- Telecommunication systems
The GDZ10LP3-7 is suitable for use in constant current, constant voltage, pulse and short circuit protection applications.
Working Principle
The GDZ10LP3-7 is a multi-layer diode with a reverse-bias junction breakdown structure. When the applied reverse-bias voltage is higher than the breakdown voltage, the Zener current will be generated and the basically flat Zener voltage can be obtained. The Zener voltage is between 3.6 and 4.2V locked in even when the reverse-bias voltage increases.
Characteristics
The GDZ10LP3-7 has strong anti-surge capability and good dynamic resistance, which makes it suitable for high-frequency flicker suppression and constant voltage/current controls in electronic equipment.
- Forward voltage: ≤ 0.95V
- Zener breakdown voltage range: 3.6 to 4.2V
- Reverse leakage current: ≤5mA.
The GDZ10LP3-7 has high reliability thanks to its high temperature reverse-bias stability ratings and 10,000 h longevity. The brief inverse recovery time makes it suitable for fast switching applications. The device\'s temperature coefficient of voltage is also low, resulting in highly stable Zener voltage in temperatures between -40°C to +125°C.
The GDZ10LP3-7 provides good performance in both forward and reverse direction. It is a high performance device of low breakdown voltage and low on resistance. The good performance further ensures the reliability and stability of the system.
The specific data is subject to PDF, and the above content is for reference
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GDZ11B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 11V 200MW SOD... |
GDZ12B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 12V 200MW SOD... |
GDZ13B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 13V 200MW SOD... |
GDZ15B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 15V 200MW SOD... |
GDZ16B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 16V 200MW SOD... |
GDZ18B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 18V 200MW SOD... |
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GDZ12B-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 12V 200MW SOD... |
GDZ13B-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 13V 200MW SOD... |
GDZ15B-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 15V 200MW SOD... |
GDZ10B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 10V 200MW SOD... |
GDZ11B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 11V 200MW SOD... |
GDZ12B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 12V 200MW SOD... |
GDZ13B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 13V 200MW SOD... |
GDZ15B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 15V 200MW SOD... |
GDZ16B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 16V 200MW SOD... |
GDZ18B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 18V 200MW SOD... |
GDZ11B-HE3-08 | Vishay Semic... | -- | 1000 | DIODE ZENER 11V 200MW SOD... |
GDZ12B-HE3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 12V 200MW SOD... |
GDZ13B-HE3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 13V 200MW SOD... |
GDZ15B-HE3-08 | Vishay Semic... | -- | 1000 | DIODE ZENER 15V 200MW SOD... |
GDZ18B-HE3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 18V 200MW SOD... |
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GDZ11B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 11V 200MW SOD... |
GDZ12B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 12V 200MW SOD... |
GDZ13B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 13V 200MW SOD... |
GDZ15B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 15V 200MW SOD... |
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