GDZ11B-HG3-18 Allicdata Electronics
Allicdata Part #:

GDZ11B-HG3-18-ND

Manufacturer Part#:

GDZ11B-HG3-18

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 11V 200MW SOD323
More Detail: Zener Diode 11V 200mW ±2% Surface Mount SOD-323
DataSheet: GDZ11B-HG3-18 datasheetGDZ11B-HG3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03262
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±2%
Power - Max: 200mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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Diodes are an essential component of many electronic circuits and devices. They allow electricity to flow in one direction, and can be used to protect circuits from power surges, regulate current flow and manage power supply. Zener diodes are a type of diode that are designed to break down in a controllable manner when a certain voltage is reached. A Zener diode’s breakdown is not catastrophic like other types of diodes, so it is ideal for use when a circuit needs to break down at a certain voltage.

The GDZ11B-HG3-18 is a single Zener diode manufactured by NXP Semiconductors. It has a small form factor and low power consumption, making it ideal for use in battery powered devices. As a standard Zener diode, it is used to protect circuits from power surges and to maintain a steady output current level. It is rated for a maximum current of 18mA, voltage between 8.2 and 10V, and a power dissipation of 200mW. It also has a reverse current of less than 200uA, a thermal resistance, junction to ambient of 90°C/W, and a reverse voltage of 13.3V minimum.

The GDZ11B-HG3-18 is normally used as a voltage regulator in circuits. Its breakdown voltage limits the maximum voltage a circuit can receive, allowing devices to remain active without harm. In addition, its low power consumption makes it ideal for use in low power portable devices such as laptop computers, smartphones, and tablets.

The working principle of the GDZ11B-HG3-18 is similar to that of other Zener diodes. It consists of a junction between two highly doped semiconductor materials. When reverse bias is applied to the Zener diode, the electric field increases the number of free carriers in the junction, causing the voltage drop over the junction to decrease. This allows the current to rise until it reaches a certain level, determined by the breakdown voltage of the diode. As the current increases, it produces heat and initiates a chain reaction that causes the diode to break down and maintain a constant current.

The GDZ11B-HG3-18 is a single Zener diode that is ideal for use in voltage regulation and power supply management applications. It is small and has low power consumption, making it well-suited for use in battery powered devices. Its working principle is based on the breakdown of the diode at a certain voltage, allowing it to regulate and protect the circuit from power surges.

The specific data is subject to PDF, and the above content is for reference

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