GDZ12B-E3-18

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GDZ12B-E3-18 is a single breakdown Zener diode with a silicon-based structure. It is designed for use in applications such as voltage regulation, voltage reference, overvoltage protection, reverse power protection, and power supply design. This diode is especially suitable for medium-speed applications where it is important to maintain a stable voltage.

Features

• 1N4007 Package Size: 12mm x 12mm
• High-frequency performance
• Very low dynamic resistance
• Pb-Free plating
• AEC-Q101 qualified
• Negative voltages up to -55 V
• Breakdown voltage range: 18 V to 200 V
• Low a temperature coefficient
• Excellent clamping capability
• Operating temperature: -65°C to +150°C
• Operating lifetime: up to 1 million cycles

Application Fields of GDZ12B-E3-18

The GDZ12B-E3-18 is mainly used in applications that require stabilized and regulated voltages, such as overvoltage protection and reverse power protection. It is also suitable for low-noise power supplies, voltage reference, and general protection circuits, due to its high frequency performance and low dynamic resistance.

The GDZ12B-E3-18 is mainly used in consumer and industrial electronics, automotive electronics, medical devices, and battery operated devices. It can also be used in switched mode power supplies (SMPS), radio and television circuit design, drones, and other high-end applications that require stabilized and regulated voltages.

Working Principle

The GDZ12B-E3-18 is a single breakdown Zener diode with a silicon-based structure. It is designed for use in applications such as voltage regulation, voltage reference, overvoltage protection, reverse power protection, and power supply design. This diode is especially suitable for medium-speed applications where it is important to maintain a stable voltage.

When the diode is forward biased, Zener voltage is applied across the diode, forcing the current through the diode to remain constant. This is known as the Zener effect. When the voltage across the diode exceeds the Zener voltage, the diode enters in the breakdown region and begins to act like a short circuit, allowing the current to flow freely through the diode. This allows for improved voltage regulation.

The GDZ12B-E3-18 also has a very low dynamic resistance, which means that even when small changes in the forward current occur, the voltage across the diode remains constant. This feature helps to ensure that the voltage across the diode is stabilized even under fluctuating loads. It also has a very low temperature coefficient, which helps to make the diode more stable over temperature changes.

Conclusion

The GDZ12B-E3-18 is a single breakdown Zener diode with a silicon-based structure. It is designed for use in applications such as voltage regulation, voltage reference, overvoltage protection, reverse power protection, and power supply design. The diode offers high frequency performance, very low dynamic resistance, a low temperature coefficient, and excellent clamping capability. It is suitable for applications ranging from consumer and industrial electronics to motorized transportation, medical devices and battery operated devices.

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