GDZ5V1B-E3-08 Discrete Semiconductor Products |
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Allicdata Part #: | GDZ5V1B-E3-08GITR-ND |
Manufacturer Part#: |
GDZ5V1B-E3-08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 5.1V 200MW SOD323 |
More Detail: | Zener Diode 5.1V 200mW ±2% Surface Mount SOD-323 |
DataSheet: | GDZ5V1B-E3-08 Datasheet/PDF |
Quantity: | 15000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.1V |
Tolerance: | ±2% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 1V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
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GDZ5V1B-E3-08 Application Field and Working Principle
Under the category of Diodes - Zener - Single, the GDZ5V1B-E3-08 is a zener diode with a breakdown voltage (Vz) of 5.1V. This diode can handle power of 500mW and has a series resistance of 5.6 ohms maximum. It is widely used in circuit protection, voltage regulation, and other general purpose applications.
A Zener diode is different from a regular diode in that it works in reverse breakdown mode, thereby allowing current to flow in both the direction. In a regular diode, when forward bias is applied the circuit current flows only in a single direction, while in a reverse biased situation, no current flows at all. However, with a Zener diode, when the voltage across its pins rises above the breakdown voltage, reverse current starts flowing, resulting in a reversed breakdown. The working of a Zener diode relies on two main principles – Avalanche Breakdown and Zener Breakdown.
The Avalanche Breakdown principle is based on the idea that when the diode is reverse biased, the electric field across it is powerful enough to generate millions of electron-hole pairs. These generated pairs increase the reverse current, and once the reverse current reaches a certain level (known as the breakdown voltage) the current is amplified. This amplification occurs due to the decrease in resistance, resulting in a significant rise in the reverse current.
The Zener Breakdown occurs when the potential difference between the two terminals of the diode reaches a certain point. At this point, the electric field across the P-N junction becomes strong enough to cause rapid electron tunneling through the junction. As the electrons tunnel, they cause a current amplification, thereby increasing the current flow.
The GDZ5V1B-E3-08 Zener diode can be used in a variety of applications, such as surge protection, voltage regulation, precision measurement and control, etc. It can be used to provide protection against overvoltages, by clamping the voltage to a safe level, thus keeping voltage spikes at bay. It can also be used as a voltage divider and voltage regulator, due to its ability to accurately regulate an applied voltage.
In conclusion, the GDZ5V1B-E3-08 Zener diode is an important component in electronics, owing to its many advantages, some of which include precise voltage regulation, surge protection, low forward voltage drop, low power dissipation, and wide operating temperature range. The diode’s ability to operate in both forward and reversed breakdown mode makes it an ideal choice for various applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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GDZ5V6B-G3-08 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V1B-E3-08 | Vishay Semic... | -- | 15000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V1B-G3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V6B-G3-18 | Vishay Semic... | -- | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V1B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V1B-HG3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V1B-HG3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V6B-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V1B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V6B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V1B-HE3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V6B-HE3-08 | Vishay Semic... | -- | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V1B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V6B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V6B-HG3-08 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V6B-HG3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V1LP3-7 | Diodes Incor... | -- | 20000 | DIODE ZENER 5.1V 250MW 2D... |
GDZ5V6LP3-7 | Diodes Incor... | -- | 10000 | DIODE ZENER 5.6V 250MW 2D... |
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