
GDZ5V6LP3-7 Discrete Semiconductor Products |
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Allicdata Part #: | GDZ5V6LP3-7DITR-ND |
Manufacturer Part#: |
GDZ5V6LP3-7 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER 5.6V 250MW 2DFN |
More Detail: | Zener Diode 5.6V 250mW ±5% Surface Mount X3-DFN060... |
DataSheet: | ![]() |
Quantity: | 10000 |
1 +: | $ 0.04000 |
10 +: | $ 0.03880 |
100 +: | $ 0.03800 |
1000 +: | $ 0.03720 |
10000 +: | $ 0.03600 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±5% |
Power - Max: | 250mW |
Current - Reverse Leakage @ Vr: | 1µA @ 2.5V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 0201 (0603 Metric) |
Supplier Device Package: | X3-DFN0603-2 |
Base Part Number: | GDZ5V6 |
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The GDZ5V6LP3-7 is a single Zener diode with unique characteristics specifically tailored for specialized applications. It has a voltage breakdown point of 5.6V, meaning that it maintains a voltage of 5.6V across its terminals when the current is sufficient to break down the internal breakdown region. At this point, it begins to absorb large amounts of current and behaves like a diode. As a result, the GDZ5V6LP3-7 is often used to limit the voltage across electronic components, as it can absorb large amounts of current while maintaining the target voltage safely.
The GDZ5V6LP3-7 has two types of breakdown points: positive breakdown and negative breakdown. Positive breakdown occurs when a forward bias voltage is applied to the diode, causing the diode\'s internal electric field to become strong enough to break down the avalanche region. At this point, the diode will conduct current and behave like a diode. The negative breakdown point is reached when a reverse voltage is applied to the diode, leading to the avalanche breakdown. In this case, the diode will not allow current to pass through, thus preventing any voltage from exceeding the target voltage.
The primary application for the GDZ5V6LP3-7 is to protect integrated circuits from over-voltage damage. When a voltage spike occurs, the diode begins to absorb current, maintaining the target voltage safely until the voltage spike dissipates. The GDZ5V6LP3-7 is also used in circuits to allow the compliance of international safety standards. By limiting the amount of over-voltage that integrated circuits can experience, the GDZ5V6LP3-7 allows manufacturers to be compliant with numerous safety regulations.
In addition to its safety applications, the GDZ5V6LP3-7 is used in many power supply applications. When used in power supplies, the GDZ5V6LP3-7 serves as a constant current source, ensuring that the output voltage is maintained at the correct level. This prevents false readings and potential damage to the equipment being supplied.
The GDZ5V6LP3-7 is also found in audio applications, such as preamplifiers and loudspeakers. Here, the GDZ5V6LP3-7 serves as an electromagnetic interference (EMI) shield, preventing interference from outside sources. The GDZ5V6LP3-7 prevents interference from interfering with the desired audio signal, preserving the audio fidelity of the signal.
The GDZ5V6LP3-7 works by using a junction diode mechanism. Its open-circuit voltage is 5.6V, and its total series resistance is approximately 0.4 ohms. The reverse leakage current is 1 microamp maximum when reverse biased at 5.6V, and the temperature coefficient of breakdown (VZ-T) is 1.78A per degree Celsius.
In summary, the GDZ5V6LP3-7 is a single Zener diode with a breakdown point of 5.6V. Its primary applications include protecting integrated circuits from over-voltage damage, providing constant current sources in power supplies, and shielding audio signals from electromagnetic interference. The GDZ5V6LP3-7 operates via a junction diode mechanism with a total series resistance of approximately 0.4 ohms and a reverse leakage current of 1 microamp.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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GDZ5V1B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V1B-E3-08 | Vishay Semic... | -- | 15000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V1B-HE3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V6B-G3-08 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V6B-HG3-08 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V6B-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V1B-G3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V1LP3-7 | Diodes Incor... | -- | 20000 | DIODE ZENER 5.1V 250MW 2D... |
GDZ5V1B-G3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V6B-HE3-08 | Vishay Semic... | -- | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V1B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V6B-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V6LP3-7 | Diodes Incor... | -- | 10000 | DIODE ZENER 5.6V 250MW 2D... |
GDZ5V6B-G3-18 | Vishay Semic... | -- | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V6B-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
GDZ5V1B-HG3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V1B-HG3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 5.1V 200MW SO... |
GDZ5V6B-HG3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 5.6V 200MW SO... |
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