GFR4D40100

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Part Status:	Active

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What Is GFR4D40100?The GFR4D40100, or Gallium Nitride Field-Effect Transistor, is an enhancement-mode high-voltage device that can be used for power switching applications up to 1000V. It is also designed to provide high current, low power losses, and fast switching speeds.The GFR4D40100 is particularly well-suited for use in the smart grid, electric power, photovoltaics, automotive, and solar market applications. Its high power handling capability, low switching losses, and fast switching times make it a logical choice for many applications.What Is the Application Field of GFR4D40100?The GFR4D40100 is designed for high-voltage applications up to 1000V and up to 40A. It is commonly used in power electronics applications such as power factor correction, motor control, UPS, HVAC, SMPS, and LED lighting.The GFR4D40100 is optimized for operations in harsh environments such as high voltage, high temperature, high altitude, and high humidity. It can also be used in high voltage inverters, DC-DC converters, and AC/DC converters.The device is qualified up to +175℃ junction temperature and is RoHS compliant, making it an excellent choice for applications requiring energy efficiency and reliability.What Is the Working Principle of GFR4D40100?The GFR4D40100 is an enhancement-mode high-voltage device. It is constructed using homoepitaxy growth techniques on a four-inch gallium arsenide wafer. The device is internally protected by multiple layers of isolation.The Gallium Nitride Field-Effect Transistor operates on the principle ofDepletion Mode and Enhancement Mode. In the Depletion Mode, the cell is designed to be weaker than its neighboring cells, thereby reducing its ability to perform desired functions. In the Enhancement Mode, however, the cell is designed to be stronger than its neighbors, thus being able to perform desired functions such as providing switching and combining.In addition, the device operates using High-Voltage Lateral Junction (HVLJ) technology. This technology utilizes a high-k dielectric isolator, a three-terminal field-effect transistor (FET) structure, and a monolithic lateral junction.As the drain and source terminals are activated, an electric field is created between the gate and drain contacts. This field results in a very low onstate resistance, allowing the current to flow from the drain to the source. The device also offers a high breakdown voltage, which enables it to support higher operational voltages.ConclusionThe GFR4D40100 is an enhancement-mode high-voltage device that can be used for power switching applications up to 1000V. The device is optimized for operations in harsh environments such as high voltage, high temperature, high altitude, and high humidity. It has high power handling capability, low switching losses, and fast switching times. It operates on the principle of Depletion Mode and Enhancement Mode and utilizes High-Voltage Lateral Junction (HVLJ) technology. It is an excellent choice for applications requiring energy efficiency and reliability.

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