GKR26/04

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The GKR26/04 is a single rectifier diode developed by Danfuss. Operating at an average current of 4 amperes and a peak current of 16 amperes, this device has been designed for use in applications where a high-voltage rectifier diode is required. It also provides superior power performance and reliability. The GKR26/04 is suitable for use in both low voltage and high voltage applications, and can operate up to 250 Volts DC.

The GKR26/04 is composed of two main components: a pn junction and a metal-oxide-semiconductor field effect transistor (MOSFET). The pn junction is a junction between two differently doped semiconductor regions. By applying a positive voltage to the pn junction, an electric field is created which creates a barrier that restricts the movement of carriers. This is the basis for the rectification action of the diode.

The MOSFET is a type of field effect transistor which can be used to control current. It is composed of a semiconductor channel connecting two terminals. By applying a voltage to one terminal, the resulting electric field can be used to adjust the conductivity of the channel and consequently the flow of current passing through it. In the GKR26/04, the MOSFET is used to control the flow of current from the pn junction, allowing for efficient rectification.

The GKR26/04 can be used in a variety of applications, including computer power supplies, motor controls and high-voltage rectifier circuits. Its ability to handle high voltages makes it suitable for applications that require precision rectification such as switching power converters. Furthermore, its low power consumption and superior power performance make it ideal for applications such as battery chargers. The GKR26/04 is an ideal choice for applications that require high reliability and precision.

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