Allicdata Part #: | GKR26/16GN-ND |
Manufacturer Part#: |
GKR26/16 |
Price: | $ 4.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP 1.6KV 25A DO4 |
More Detail: | Diode Standard 1600V 25A Chassis, Stud Mount DO-4 |
DataSheet: | GKR26/16 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 3.61992 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1600V |
Current - Average Rectified (Io): | 25A |
Voltage - Forward (Vf) (Max) @ If: | 1.55V @ 60A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 4mA @ 1600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -40°C ~ 180°C |
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The GKR26/16 is a single-phased fast, medium and ultrafast recovery rectifier diode manufactured using Dynex Semiconductor’s advanced semiconductor technology. It offers excellent performance in a wide range of applications. This quick-response rectifier, combined with a fast, medium or ultrafast recovery process, is particularly suitable for use in high-speed switching converter applications. In addition to its excellent performance, the GKR26/16 offers die-level protection against static electric discharge (ESD).
The GKR26/16 offers an attractive combination of performance, robustness and termination type. This device is well-suited for a wide range of applications including power supplies, DC-DC converters, and signal generators. The diode can be used in either dual-ended or single-ended configurations.
The GKR26/16 is available in three different versions: the GKR26/16-02, GKR26/16-04, and GKR26/16-08. It has a reverse voltage of 600V, a forward voltage of 150V, and a surge current of 4A. The device also features ultra-low gate leakage currents of 5μA at 25°C and 10μA at 85°C.
In terms of its application field, the GKR26/16 is well-suited for use as a basic high-speed rectifier in power supply, lighting and signal generator applications. This diode can also be used in numerous other applications, such as in high-speed switching converters, power factor correction circuits and ripple-current current bypasses. The device is especially suited for applications that require fast, medium and ultrafast switching, with the GKR26/16-02 being able to switch at a rate of 50V/μs, the GKR26/16-04 switching at a rate of 100V/μs and the GKR26/16-08 switching at a rate of 200V/μs.
The working principle of the GKR26/16 is based on the concept of a reverse biased p-n junction diode. When a DC voltage is applied to the anode, the depletion region in the p-n junction becomes populated with minority carriers. This generates an electric field in the body of the diode, that can be used to control the flow of current through the diode. When a positive voltage is applied to the anode, an electric field pulls current through the junction, allowing current to flow from anode to cathode. However, when the applied voltage is reversed, the field will block any current from flowing in the reverse direction, protecting the diode.
The working principle of the GKR26/16 also includes the concept of reverse recovery. When the applied voltage is reversed, the electric field that is formed in the junction begins to collapse, releasing any excess charge carriers that have built up in the diode. This process causes a surge of current that flows in the reverse direction, and is referred to as the reverse recovery. The speed of the reverse recovery is determined by the reversal voltage and the loading on the diode.
Overall, the GKR26/16 is an effective single-phased fast, medium and ultrafast recovery rectifier diode. Its features, performance, and robustness make it highly suitable for use in various applications such as power supplies, DC-DC converters, and signal generators. Additionally, this device employs a reverse recovery process that is fast, medium and ultrafast, allowing for greater control over the current flow and protection of the diode from any external voltage reverses.
The specific data is subject to PDF, and the above content is for reference
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