GL34B-TP Discrete Semiconductor Products

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The GL34B-TP is a high power diode, suitable for rectifying and transporting electrical current in applications such as AC or DC motors and power tools. The GL34B-TP diode is a maximum current diode and can handle up to 30 A reverse current. This diode has a three layer construction, with a silicon epitaxial layer sandwiched between two layers of Phosphorus-Doped Boron Nitride (BP-N) which creates a positive temperature coefficient and prevents thermal runaway. In this way, the GL34B-TP operates as a single-package rectifier, enabling efficient power circuit design and protected operation.

The GL34B-TP has an operating current of 4 A and a pulsed peak current of 9.5 A, making it a suitable choice for current limiting circuits, including power supplies and motor control. The forward voltage drop of the diode is 0.75 V at 4 A, which is low enough to ensure that operating power losses are minimal. The diode can also handle up to 30 A reverse current, making it suitable for applications such as inductive loads or wave bridge rectification, where power surges are common. The diode can also handle high frequency signals, such as digital switching waves and RF waveforms, without any dissipation.

The GL34B-TP also features a built-in zener diode, which helps to protect the circuit from reverse currents, voltage spikes and oscillations caused by external electromagnetic interference. The zener diode has a zener voltage of 24 V, and a breakdown voltage of 18 V, which helps to protect the diode from operating outside of its recommended voltage range. The diode is also equipped with a built-in temperature control system which controls the diode’s operating temperature to prevent it from overheating. The system includes an internal temperature sensor and a transistor which enables the diode to regulate the amount of current that it can safely handle.

The GL34B-TP diode also features enhanced ESD protection, which helps to prevent ESD damage when used in static sensitive environments. It also includes a reverse DI/DT (direct inverse device temperature) which helps to protect the diode against temperature shock and self-heating, enabling it to safely handle higher current densities without overheating the device. The diode’s design also helps to keep the total electromagnetic interference (EMI) of the device low, making it ideal for use in sensitive electronic equipment.

In conclusion, the GL34B-TP diode is a high power diode which is suitable for rectifying and transporting electrical current. The diode is capable of handling high current densities and high frequency signals, with a low forward voltage drop and built-in protection systems. The diode also features enhanced ESD protection and a reverse DI/DT which helps to protect the device from temperature shock and self-heating. All of these features make the GL34B-TP an ideal choice for a variety of applications, particularly AC or DC motors and power tools.

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