
Allicdata Part #: | GL41G-E3/97-ND |
Manufacturer Part#: |
GL41G-E3/97 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO213AB |
More Detail: | Diode Standard 400V 1A Surface Mount DO-213AB |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.06034 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | GL41G |
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Diodes are semiconductor devices that are used to control the flow of current. They are usually made up of two layers of semiconductor material, one of which is N-type and the other P-type. The P-type layer is the positive layer (anode) and the N-type layer is the negative layer (cathode). When a voltage is applied to the diode, the electrons in the N-type layer can move freely and the current flows through the diode.
Single rectifiers are diodes that are designed to provide a one-way flow of current. They are most commonly used in power supply systems to convert alternating current (AC) to direct current (DC). When a voltage is applied, the diode only allows current to flow in one direction, allowing for effective power conversion.
GL41G-E3/97 is a single rectifier diode with a forward voltage of 3.2 V and an average forward current rating of 97 A. The GL41G-E3/97 is specifically designed for use in high power, high voltage applications such as solar cell arrays and traction systems. The diode can handle up to 200V reversal voltage and the package is designed to dissipate large amounts of heat.
The working principle of the GL41G-E3/97 diode is fairly simple. When a voltage is applied across the terminals, electrons will begin to flow from the cathode to the anode creating a current. As the voltage continues to increase, the current will also increase up to the rated maximum of 97 A. In situations where the voltage is higher than 200V, the diode will simply reach its non-conductive state and no current will flow.
The GL41G-E3/97 is a rugged and reliable single rectifier diode that is ideal for applications requiring a high power and voltage rating. Its ability to dissipate large amounts of heat allows it to handle high voltage reversals without damage. Its simple working principle makes it a suitable choice for power conversion in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GL41YHE3/96 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 1.6KV 1A D... |
GL41M-E3/96 | Vishay Semic... | -- | 34500 | DIODE GEN PURP 1KV 1A DO2... |
GL41B-E3/96 | Vishay Semic... | 0.08 $ | 6000 | DIODE GEN PURP 100V 1A DO... |
GL41D-E3/96 | Vishay Semic... | -- | 6000 | DIODE GEN PURP 200V 1A DO... |
GL41M/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GL41AHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GL41T-E3/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
GL41JHE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GL41J-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 600V 1A DO... |
GL41D-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GL41DHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GL4100E0000F | Sharp Microe... | 0.0 $ | 1000 | EMITTER IR 950NM 50MA RAD... |
GL41G-E3/96 | Vishay Semic... | -- | 16500 | DIODE GEN PURP 400V 1A DO... |
GL41AHE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GL41GHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GL41THE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
GL41K-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GL41THE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
GL41A-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GL41B/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GL41G-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GL41K-E3/96 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GL41J-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GL41G/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GL41A/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GL41M-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GL41BHE3/96 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GL41T-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
GL41GHE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GL41MHE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GL41Y-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1.6KV 1A D... |
GL4100 | Sharp Microe... | 0.0 $ | 1000 | EMITTER IR 950NM 50MA RAD... |
GL41MHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GL41D/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GL41JHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GL41Y/1 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1.6KV 1A D... |
GL41B-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GL41Y-E3/96 | Vishay Semic... | -- | 7500 | DIODE GEN PURP 1.6KV 1A D... |
GL41BHE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GL41YHE3/97 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 1.6KV 1A D... |
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