Allicdata Part #: | GP02-35-M3/54-ND |
Manufacturer Part#: |
GP02-35-M3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 3.5KV 250MA DO204 |
More Detail: | Diode Standard 3500V 250mA Through Hole DO-204AL (... |
DataSheet: | GP02-35-M3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 3500V |
Current - Average Rectified (Io): | 250mA |
Voltage - Forward (Vf) (Max) @ If: | 3V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 3500V |
Capacitance @ Vr, F: | 3pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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Introduction:
A GP02-35-M3/54 diode, also commonly referred to as a point-contact diode, is typically a three-terminal, ultra-fast switching diode operating in the Schottky region. Its unique properties and design characteristics makes it the ideal choice for use in a variety of applications, including those where speed and reliability are essential. It is capable of manipulating tiny amounts of current and has a very short recompense time for efficient operation.Application Field:
The GP02-35-M3/54 diode can be employed in a variety of applications, such as switching applications, rectification, and sample-and-hold circuitry. It is suitable for applications that require very fast switching speed and low-powers losses. It is also used in high-frequency applications, such as charge pumps and voltage regulators.The GP02-35-M3/54 diode is also used in AC-DC, DC-DC, as well as voltage divider circuits. Its robust performance characteristics make it a cost-effective solution for rectification purposes in a variety of medium- and high-power applications, such as power converters, power supplies, uninterruptible power supplies (UPSs), and motor control.The device is further used in the automotive industry for applications such as rectifier circuits for airbags and seatbelt pre-tensioners. It can be used to regulate the flow of current in a variety of power-electronic systems, including DC-AC inverter designs and various PWM rectifier circuits.Working Principle:
The GP02-35-M3/54 diode is a semiconductor device that is capable of controlling the flow of current. It is made up of n-type and p-type materials, which are used to control the flow of current. The GP02-35-M3/54 has a very fast switching speed, making it ideal for high-frequency applications.The diode works by allowing current to pass through it when the anode is positive and the cathode is negative. When an electric field is applied across the diode, the negatively charged ions (electrons) at the n-type material are pushed towards the anode. The positively charged ions (holes) in the p-type material are then attracted to the cathode, thus creating an electric current.The bandwidth and forward voltage drop of the GP02-35-M3/54 diode depend on the doping level, junction temperature, and doping profile of the materials used. Generally speaking, the bandgap voltage increases with higher doping levels and decreased junction temperatures, while the forward voltage drop decreases with higher doping levels and lower junction temperatures.Conclusion:
The GP02-35-M3/54 diode is an ultra-fast switching, three-terminal device that operates in the Schottky region. Its properties and design characteristics make it the ideal choice for switching, rectification, and sample-and-hold circuitry, as well as high-frequency applications. It is mainly employed in power-electronics systems, as well as automotive industry applications, such as rectifier circuits for airbags and seatbelt pre-tensioners. The speed and voltage behavior of the diode depends on the doping level, junction temperature, and doping profile of the materials used in its construction.The specific data is subject to PDF, and the above content is for reference
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GP02-35HE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 3.5KV 250M... |
GP02-40HE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 4KV 250MA ... |
GP02-20HE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2KV 250MA ... |
GP02-25HE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2.5KV 250M... |
GP02-30HE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 3KV 250MA ... |
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GP02-40HE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 4KV 250MA ... |
GP02-25-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 2.5KV 250M... |
GP02-35-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 3.5KV 250M... |
GP02-40-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 4KV 250MA ... |
GP02-25-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 2.5KV 250M... |
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GP02-20HE3/53 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2KV 250MA ... |
GP02-20HM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2KV 250MA ... |
GP02-20-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2KV 250MA ... |
GP02-25HE3/53 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2.5KV 250M... |
GP02-25HM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2.5KV 250M... |
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GP02-35HM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 3.5KV 250M... |
GP02-35-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 3.5KV 250M... |
GP02-40HE3/53 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 4KV 250MA ... |
GP02-40HM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 4KV 250MA ... |
GP02-40-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 4KV 250MA ... |
GP02-20HM3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2KV 250MA ... |
GP02-20-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2KV 250MA ... |
GP02-25HM3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 2.5KV 250M... |
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