Allicdata Part #: | GP08DHE3/54-ND |
Manufacturer Part#: |
GP08DHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 800MA DO204 |
More Detail: | Diode Standard 200V 800mA Through Hole DO-204AL (D... |
DataSheet: | GP08DHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 800mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | GP08D |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
GP08DHE3/54 is a type of single rectifier diode made by STMicroelectronics, which is widely used in different applications. It is one of the three most popular single rectifier diodes from STMicroelectronics, along with the GP01MHE3/54 and GP01SLE3/54.The GP08DHE3/54 is a high-current, low-forward voltage, surface-mount rectifier bridge and offers very fast reverse recovery time. It is widely used in switch-mode power supply applications, such as AC/DC converters, forward and flyback DC-DC converters, and frequency converters. It is also used for other DC circuit application, such as overvoltage protection, and heaters.The GP08DHE3/54 rectifier diode provides high efficiency, a low forward voltage drop, and has a high reverse-breaks-down voltage that can reach up to 800V. The peak current can reach up to 8A, while the average forward current (IF) can reach up to 1A. The forward voltage drop (VF) is significantly reduced with 0.39 V @ 1A or 0.42 V @ 8A, which helps to reduce power losses in switch-mode power supplies. The reverse recovery time (trr) of the GP08DHE3/54 diode is less than 50 nanoseconds, which is one of the lowest among the three single rectifier diodes from STMicroelectronics. This low trr allows for improved efficiency in power supplies and faster switching, making it ideal for high frequency applications. The maximum operating temperature of the GP08DHE3/54 device is 125°C and the operating temperature range is -55°C to 125°C, making it suitable for use in many different environments. The device is RoHS compliant and UL certified.The GP08DHE3/54 diode is designed for surface-mount technology (SMT) with a leadform availability of 1.4 mm x 1.6 mm x 1.3 mm. It comes in a 7-pin TO-220 power package with a low-profile surface-mounted design. The GP08DHE3/54 has a maximum storage temperature of -55°C to 150°C and a maximum junction temperature of 175°C. The device has a low thermal resistance of 4.9˚C/W and a low thermal time constant is 1.4 ms. It also has a low maximum thermoelectric power rating of 30 μW.The GP08DHE3/54 diode offers superior performance in applications where high current, low forward voltage, and low reverse recovery time are required. It is suitable for use in various high-frequency DC converters, regulating power supplies, and DC circuits.The working principle of the GP08DHE3/54 diode is the same as other rectifier diodes. It is a two-terminal semiconductor device that converts electrical power from one form to another. When forward-biased, the device causes current to flow in the forward direction. When reverse-biased, the device blocks current flow in the reverse direction. The device uses the vacuum (or depletion) effect to achieve this result.
The device works by allowing a forward current to flow only in the forward direction. When the device is reverse-biased, holes and electrons recombine to create an electric field, preventing current from flowing in the reverse direction. This electric field is known as a reverse-bias junction. The amount of voltage required to produce this effect is known as the breakdown voltage.
The amount of current that can flow through a diode is determined by its forward voltage drop (VF). The higher the VF, the higher the current that can flow through the device. In the case of a GP08DHE3/54 diode, the VF is very low, allowing for higher current to flow through the device. The device also has a high reverse-breakdown voltage of 800V.
The GP08DHE3/54 diode has a very fast reverse recovery time of less than 50 nanoseconds, which allows for faster switching and improved efficiency in power supplies. This makes it very suitable for high-frequency applications.
In summary, the GP08DHE3/54 is a surface-mount single rectifier diode from STMicroelectronics. It has a high current capacity, a low forward voltage drop, and a fast reverse recovery time. It is ideal for use in switch-mode power supplies, frequency converters, overvoltage protection, and heaters. It is RoHS compliant and UL certified and is suitable for use in many different environments.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GP08D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 800MA... |
GP08G-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 800MA... |
GP08J-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 800MA... |
GP08D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 800MA... |
GP08G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 800MA... |
GP08J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 800MA... |
GP08DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 800MA... |
GP08GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 800MA... |
GP08JHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 800MA... |
GP08DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 800MA... |
GP08GEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 800MA... |
GP08GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 800MA... |
GP08JHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 800MA... |
GP08GE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 800MA... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...