GP08J-E3/73

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are the fundamental building blocks of modern electronics and have a multitude of applications. The single rectifier GP08J-E3/73 is a device used mainly in power supplies. It is widely used in power electronic circuits such as rectifiers, converters, and rectified amplifiers.

The GP08J-E3/73 device is an epitaxial diode, meaning that it is grown on the surface of the silicon substrate, as opposed to being diffused down into the substrate. This technique gives the device better high frequency performance, transient response, and switching characteristics.

The GP08J-E3/73 device is a medium-power, single-terminal rectifier, capable of withstanding reverse or forward voltages up to 800 volts (V) and continuous currents up to 8 amps (A). It has a large reserve current capacity, high surge current capability, and excellent surge withstand capability. With a maximum DC output current of 8.5A and an average forward current of 5.5A, it is ideal for use in power supplies.

The device is based on a planar mesa technology, which provides superior performance in applications requiring high frequencies, rapid turn-on times, and exceptional surge energy capability. It is also advantageous in applications that require minimal space, such as the popular "thin-film" batteries. The device also has a low-forward voltage drop and low reverse leakage current.

The GP08J-E3/73 device is a PN junction diode made of silicon, which is a semiconductor material. The PN junction is formed by doping two sides of the silicon with different materials. One side is doped with a material that carries negative charge carriers, electrons, and the other side is doped with a material that carries positive charge carriers, known as holes. When forward biased, current flows from the negative side to the positive side.

The doping process gives the device a built-in potential barrier, which acts as a rectifier. Under forward bias, the barrier potential is low enough that current can flow from the negative side to the positive side of the junction. Reverse bias, however, causes the barrier potential to rise, so that current cannot flow in the reverse direction.

The device is also equipped with recovery time-guard circuitry, which activates if a current surge occurs. The guard circuitry limits the reverse recovery time of the diode, thus preventing the current spike from damaging the device and insuring the safe operation of the device.

The application field of the GP08J-E3/73 device is mainly used in power supplies and power electronic circuits like rectifiers and converters. It is also widely used in high power applications such as rectified amplifiers, solar cells and power supplies for semiconductor lasers. With its superior performance characterics, it is an excellent choice for these types of applications.

The GP08J-E3/73 is a reliable and efficient single rectifier, capable of withstanding high voltages and currents, and superior performance at high frequencies. Its planar mesa technology provides excellent surge energy capability, low-forward voltage drops, and its recovery time-guard circuitry increases safety and reliability. With its wide range of applications, it is a suitable choice for use in a variety of power electronic circuits.

The specific data is subject to PDF, and the above content is for reference