GSD2004C-HE3-08 Allicdata Electronics

GSD2004C-HE3-08 Discrete Semiconductor Products

Allicdata Part #:

GSD2004C-HE3-08GITR-ND

Manufacturer Part#:

GSD2004C-HE3-08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY GP 240V 225MA SOT23
More Detail: Diode Array 1 Pair Common Cathode Standard 240V 22...
DataSheet: GSD2004C-HE3-08 datasheetGSD2004C-HE3-08 Datasheet/PDF
Quantity: 12000
Stock 12000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 240V
Current - Average Rectified (Io) (per Diode): 225mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 240V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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Introduction

GSD2004C-HE3-08 is an unidirectional low voltage rectifier array manufactured by General Semiconductor. The array contains four independent high-efficiency Schottky barrier rectifiers in a single package. The package is provided in surface mount form, making it suitable for applications requiring small size and low power consumption.

Application Field

The GSD2004C-HE3-08 is designed for use in power generation and delivery systems. It can be used as a rectifier in AC-to-DC and DC-to-DC converters, as well as polarity reversing and protection circuits in automotive applications. Additionally, it is suitable for use in telecommunication systems, such as cellphones, modems and fax machines.

Working Principle

The GSD2004C-HE3-08 utilizes a Schottky barrier diode (SBD) to rectify the input voltage into a DC voltage. This process works by exploiting the physical phenomenon known as the Schottky effect, which is where electrons flow from a metal semiconductor junction at a much higher rate than from a standard p-n junction. This results in a very low forward voltage drop, which allows for more efficient rectification. At the heart of the device is the SBD, which consists of a metal semiconductor junction. This junction serves as the electrostatic barrier that the electrons must pass through in order to be rectified. When the input voltage is applied, the electrons flow through the SBD and are rectified into a DC voltage. Depending on the direction of input current, the device is able to rectify both polarities.

Conclusion

The GSD2004C-HE3-08 rectifier array is a small and efficient device designed for power generation and delivery systems. It utilizes a Schottky barrier diode (SBD) to rectify the input voltage into a DC voltage, exploiting the physical phenomenon known as the Schottky effect. With its low power consumption and small size, the GSD2004C-HE3-08 is suitable for applications such as AC-to-DC and DC-to-DC converters, polarity reversing, protection circuits and telecommunication systems.

The specific data is subject to PDF, and the above content is for reference

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GSD2004C-HE3-08 Vishay Semic... -- 12000 DIODE ARRAY GP 240V 225MA...
GSD2004S-E3-08 Vishay Semic... -- 1000 DIODE ARRAY GP 240V 225MA...
GSD2004A-E3-18 Vishay Semic... 0.03 $ 1000 DIODE ARRAY GP 240V 225MA...
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GSD2004C-E3-08 Vishay Semic... 0.03 $ 1000 DIODE ARRAY GP 240V 225MA...
GSD2004A-HE3-18 Vishay Semic... 0.03 $ 1000 DIODE ARRAY GP 240V 225MA...
GSD2004C-HE3-18 Vishay Semic... 0.03 $ 1000 DIODE ARRAY GP 240V 225MA...
GSD2004S-HE3-18 Vishay Semic... 0.03 $ 1000 DIODE ARRAY GP 240V 225MA...
GSD2004A-HE3-08 Vishay Semic... 0.03 $ 1000 DIODE ARRAY GP 240V 225MA...
GSD2004A-G3-18 Vishay Semic... 0.03 $ 1000 DIODE ARRAY GP 240V 225MA...
GSD2004A-G3-08 Vishay Semic... 0.03 $ 1000 DIODE ARRAY GP 240V 225MA...
GSD2004S-G3-08 Vishay Semic... 0.03 $ 1000 DIODE ARRAY GP 240V 225MA...
GSD2004C-G3-08 Vishay Semic... 0.05 $ 1000 DIODE ARRAY GP 240V 225MA...
GSD2004W-E3-18 Vishay Semic... -- 1000 DIODE GEN PURP 240V 225MA...
GSD2004WS-E3-18 Vishay Semic... -- 1000 DIODE GEN PURP 240V 225MA...
GSD2004W-HE3-18 Vishay Semic... 0.03 $ 1000 DIODE GEN PURP 240V 225MA...
GSD2004WS-HE3-18 Vishay Semic... 0.03 $ 1000 DIODE GEN PURP 240V 225MA...
GSD2004WS-HE3-08 Vishay Semic... 0.03 $ 1000 DIODE GEN PURP 240V 225MA...
GSD2004W-G3-18 Vishay Semic... 0.04 $ 1000 DIODE GEN PURP 240V 225MA...
GSD2004W-G3-08 Vishay Semic... 0.04 $ 1000 DIODE GEN PURP 240V 225MA...
GSD2004WS-G3-18 Vishay Semic... 0.04 $ 1000 DIODE GEN PURP 240V 225MA...
GSD2004WS-G3-08 Vishay Semic... 0.04 $ 1000 DIODE GEN PURP 240V 225MA...
GSD2004WS-E3-08 Vishay Semic... 0.04 $ 15000 DIODE GEN PURP 240V 225MA...
GSD2004W-HE3-08 Vishay Semic... -- 9000 DIODE GEN PURP 240V 225MA...
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