GSXD120A020S1-D3

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The GSXD120A020S1-D3 is a rectifier array from Diodes Incorporated, a leading international discrete semiconductor and signal processing systems company, offering a wide range of products in wide range of applications. It is a dual channel rectifier having also integrated possibility for channel switching. With this integrated system of channel switching, it offers a useful feature for reliability, flexibility and capability in multiple applications. Its dual channel rectifier array provides excellent performance and reliability in both single and multiple station applications.

Applications

The GSXD120A020S1-D3 is suitable for widely various power supply applications, such as AC-DC power supplies and open frame power supplies. In addition, it is suitable for automotive equipment and home appliances.

Working principles

GSXD120A020S1-D3 is an integrated device utilizing a thickfilm-on-film rectifier configuration for high efficiency. The rectifier die is a twosurface process, in which the anode metallisation and semiconductor junction are on the same side of the curved die substrate and the cathode metallisation is formed on the opposite side. This process allows for the contact between the a/c leads and the rectifier diode anode to be placed in both vertical and horizontal orientations. This design can save valuable space when mounting the rectifier in an open frame or optional PCB.

The GSXD120A020S1-D3 is designed to efficiently and accurately convert alternating current (AC) line voltages into direct current (DC) to power multiple applications. This rectifier is designed to quickly rectify AC line input with low voltage drops and low leakage currents, achieving high efficiency of power conversion with improved power factor. In addition, the GSXD120A020S1-D3 provides protection against current over-loading and reverse polarities as well as very low forward voltage losses, making it a highly efficient rectifier with a good temperature operating range.

The GSXD120A020S1-D3 also employs a high temperature-resistant dielectric layer of silicon dioxide. This protective dielectric layer greatly reduces the potential for corrosion or any other form of damage to the rectifier\'s metal contacts. The dielectric layer also works to eliminate any possible leakage currents between anode and cathode metallizations. The rectifier also features a wide operating temperature range of -40°C to 150°C and a high forward drop of only 0.3V.

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