GSXF100A020S1-D3 Allicdata Electronics
Allicdata Part #:

1560-1118-5-ND

Manufacturer Part#:

GSXF100A020S1-D3

Price: $ 14.69
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: DIODE FAST REC 200V 120AA SOT227
More Detail: Diode Array 2 Independent Standard 200V 120A Chass...
DataSheet: GSXF100A020S1-D3 datasheetGSXF100A020S1-D3 Datasheet/PDF
Quantity: 75
1 +: $ 13.34970
13 +: $ 12.13380
26 +: $ 11.22370
104 +: $ 10.31370
260 +: $ 9.40373
507 +: $ 8.79704
Stock 75Can Ship Immediately
$ 14.69
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1V @ 100A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Description

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GSXF100A020S1-D3 is a device that belongs to the category of diodes, rectifiers, and arrays. It is an array of NPN bipolar junction transistors (BJT) integrated in a small body and having eight pins which are connected to the different terminals of the device.

The application areas of GSXF100A020S1-D3 include: power supplies, mobile devices, automotive electronics, industrial machines, control systems and many more. It is mainly used as a driver to switch between on/off states in an efficient way. The device is well-suited for operation in low frequency applications due to its low power dissipation.

The working principle of GSXF100A020S1-D3 can be summarized as follows. It has a junction field effect transistor (JFET) device connected between the collector and emitter of the bipolar junction transistors. The entire device is powered by a single voltage source, allowing it to function as both a switch and a driver. When the base of the BJT is energized the gate of the JFET will open and the power transistor will be switched on. The current will then pass through the transistor and out the drain. When the base of the BJT is de-energized the gate of the JFET closes and the transistor is switched off. The device allows for efficient control of the current passing through it.

GSXF100A020S1-D3 devices are very simple to use. They are very reliable and long-lasting, making them ideal for many applications. They are energy efficient, with high current ratings and low power consumption. As such, they are perfect for applications that require low power consumption and high reliability. The device is also easy to integrate into the design of other components or systems, making it very versatile.

GSXF100A020S1-D3 is a great choice for applications that require a switch and driver in low power applications. It is easily integrated into other components, highly reliable, and has a long lifespan, making it an ideal choice for many situations. Despite its compact size, this device offers excellent performance and high current ratings, making it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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