| Allicdata Part #: | GWS9294-ND |
| Manufacturer Part#: |
GWS9294 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America Inc. |
| Short Description: | MOSFET 2 N-CH 20V 10.1A 4QFN |
| More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 1... |
| DataSheet: |  GWS9294 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Dual) Common Drain |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 10.1A (Ta) |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 6.5A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 10V |
| Power - Max: | 3.6W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 4-VDFN |
| Supplier Device Package: | 4-QFN (2x2) |
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The GWS9294 is a transistor array—a chip with multiple transistors on one circuit, making it advantageous not only to save space but also to facilitate design. It contains a switch, an amplifier, and a special field-effect transistor (FET), designed for rapid switching, sensitive current, and low power-consumption applications. This article will look into its application field and the working principle of the GWS9294.
The GWS9294 can be used in analog, digital, and mixed signal applications. It has a very low input capacitance and it can handle edge-rate up to 200V/nS. This makes it ideal for use in high speed data acquisition and communication systems, digital signal processing (DSP), and other applications that require fast switching. It can also be used in power electronics and motor control, as it has a very low on-state resistance and can handle large amounts of pulse current. Due to its low power consumption, the GWS9294 is also suitable for battery-powered applications.
The GWS9294 is composed of two transistors: an N-channel MOSFET and a P-channel FET, each having its own independent gate, drain, and source. The central gate in between them, commonly referred to as the common gate, serves as a switch between the two transistors. When the common gate voltage is low, the N-channel MOSFET is turned on, allowing current to flow in the forward direction (i.e. from source to drain). When the common gate voltage is high, the P-channel FET is turned on, allowing current to flow in the reverse direction (i.e. from drain to source). This switching action is known as the ‘punch through’ effect.
An additional feature of the GWS9294 is its inherently low switching time. Due to the low input capacitance, the rise and fall times of the signal are very low. This, coupled with the low on-state resistance, makes the device ideal for achieving fast switching times. The device also has power protection and ESD-protection capabilities.
The GWS9294 is a versatile and efficient transistor array that can be used in a variety of applications. Its low-power consumption makes it ideal for battery-powered applications. The low input capacitance and fast switching time make it suitable for digital signal processing, data acquisition, and communication systems. And its ESD-protection and power protection capabilities make it a safe and reliable choice for industrial and commercial applications. With its wide range of applications, the GWS9294 is an excellent choice for any circuit designer.
The specific data is subject to PDF, and the above content is for reference
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