Allicdata Part #: | H11A5M-V-ND |
Manufacturer Part#: |
H11A5M-V |
Price: | $ 0.11 |
Product Category: | Isolators |
Manufacturer: | Everlight Electronics Co Ltd |
Short Description: | OPTOISO 5KV TRANS W/BASE 6DIP |
More Detail: | Optoisolator Transistor with Base Output 5000Vrms ... |
DataSheet: | H11A5M-V Datasheet/PDF |
Quantity: | 1000 |
1040 +: | $ 0.09582 |
Output Type: | Transistor with Base |
Supplier Device Package: | 6-DIP |
Package / Case: | 6-DIP (0.400", 10.16mm) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 110°C |
Vce Saturation (Max): | 400mV |
Current - DC Forward (If) (Max): | 60mA |
Voltage - Forward (Vf) (Typ): | 1.2V |
Current - Output / Channel: | -- |
Voltage - Output (Max): | 80V |
Series: | -- |
Input Type: | DC |
Rise / Fall Time (Typ): | -- |
Turn On / Turn Off Time (Typ): | 3µs, 3µs |
Current Transfer Ratio (Max): | -- |
Current Transfer Ratio (Min): | 30% @ 10mA |
Voltage - Isolation: | 5000Vrms |
Number of Channels: | 1 |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Optoisolators are electrical components designed to isolate two sections of a circuit while providing a path for communication. This is done by using infrared radiation absorbed by a photodiode to open and close a transistor-based switch. The H11A5M-V optoisolator is a 4-pin integrated circuit (IC) which contains a gallium arsenide (GaAs) infrared source, an integrated phototransistor, and a collector-base resistor. The H11A5M-V is used in many different applications, including industrial control systems, telecommunications, computer peripherals, consumer electronics, and signal detection.
The H11A5M-V has many advantages over alternative optoisolators thanks to its compact design and cost-effectiveness. Its low capacitance is beneficial when used in sensitive electronics, such as digital logic devices or logic level circuits. The device also features low power consumption, fast switching speeds, and a resistance to optical noise. In addition, the H11A5M-V is protected against optical damage, reverse voltage, and static electricity.
The H11A5M-V contains a GaAs infrared source which is situated between the emitter and collector of a phototransistor. When a high current is applied to the emitter of the phototransistor, the infrared source emits infrared light, which is absorbed by the photodiode. This activates the phototransistor and allows current to flow between the emitter and collector. The current that is passed through the phototransistor results in a voltage drop across the collector-base resistor, which can be used to switch between two different states in the circuit.
The H11A5M-V is also equipped with several protection mechanisms to increase its reliability and longevity. It is protected against over-current, short-circuits, and voltage transients. It does not require any additional components, such as drivers or power supplies, making it a cost-efficient solution. In addition, the device also features enhanced EMC performance, ensuring that it will not be disrupted by interference.
The H11A5M-V optoisolator is an ideal solution for applications requiring low power consumption and fast switching speeds. It is used in a variety of industries, including industrial control, telecommunications, computer peripherals, and consumer electronics. Furthermore, the device is protected against optical damage, over-current, short-circuits, and voltage transients, making it a reliable and cost-effective optoisolator.
The specific data is subject to PDF, and the above content is for reference
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