H11A5SD Allicdata Electronics
Allicdata Part #:

H11A5SD-ND

Manufacturer Part#:

H11A5SD

Price: $ 0.00
Product Category:

Isolators

Manufacturer: ON Semiconductor
Short Description: OPTOISO 5.3KV TRANS W/BASE 6SMD
More Detail: Optoisolator Transistor with Base Output 5300Vrms ...
DataSheet: H11A5SD datasheetH11A5SD Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Output Type: Transistor with Base
Supplier Device Package: 6-SMD
Package / Case: 6-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Vce Saturation (Max): 400mV
Current - DC Forward (If) (Max): 100mA
Voltage - Forward (Vf) (Typ): 1.18V
Current - Output / Channel: --
Voltage - Output (Max): 30V
Series: --
Input Type: DC
Rise / Fall Time (Typ): --
Turn On / Turn Off Time (Typ): 2µs, 2µs
Current Transfer Ratio (Max): --
Current Transfer Ratio (Min): 30% @ 10mA
Voltage - Isolation: 5300Vrms
Number of Channels: 1
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Optoisolators provide electrical isolation between two systems or circuits with different voltages. They are used when the two circuits need to interact but must not be connected electrically. The H11A5SD optoisolator is a transistor, photovoltaic output type, and it is suitable for a number of applications.

The device is typically used in non-isolated output applications, such as digital-to-analog converters and intelligent sensors. It is also suitable for applications requiring electromagnetic interference (EMI) immunity and level shifting. The optoisolator\'s photovoltaic output provides fast switching time and low susceptibility to current and voltage noise.

The H11A5SD is a two-terminal, single-channel optoisolator with a built-in photodiode and a transistor output stage. It consists of a gallium arsenide infrared light-emitting diode (GalnP), a light-detecting photodiode, a transistor mounted in a glob top sealed package. The photodiode detects the emitted light from the GalnP LED which is converted into a current that drives the transistor to be turned on, thus providing isolated electrical isolation between two circuits.

The H11A5SD optoisolator features a collector-to-emitter breakdown voltage of 50V, a dynamic response time of 1.5 μs at 5 mA collector current, and a power dissipation of 350mW. Its guaranteed CTR (Current Transfer Ratio), that is the current ratio between the output transistor collector current to the LED input current, is between 20% and 150%. It is also compatible with logic level signals, allowing the optoisolator to handle input signals between TTL and CMOS voltage levels.

In terms of the working principle, the H11A5SD optoisolator transmits information between the two circuits using light. The signal from the input side is converted by the LED diode into light and is detected by the photodiode. The signal is then amplified by the transistor output stage, resulting in an electrical signal at the output circuit. The optoisolator functions by providing an isolation barrier between the two circuits, preventing the electrical energy from the sender circuit from entering the receiver circuit.

To summarize, the H11A5SD transistor, photovoltaic output optoisolator is an isolated interface device that helps make the connection between two systems or circuits with different voltages, while providing isolation from EMI effects. The optoisolator combines a gallium arsenide infrared LED, a photodiode, and a transistor output stage in a Compact package, and features fast switching time, low susceptibility to current and voltage noise, and compatibility with logic level signals. It is suitable for applications such as digital-to-analog converters, intelligent sensors, and level shifting.

The specific data is subject to PDF, and the above content is for reference

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