H11A817B3SD Allicdata Electronics
Allicdata Part #:

H11A817B3SD-ND

Manufacturer Part#:

H11A817B3SD

Price: $ 0.00
Product Category:

Isolators

Manufacturer: ON Semiconductor
Short Description: OPTOISO 5.3KV TRANSISTOR 4SMD
More Detail: Optoisolator Transistor Output 5300Vrms 1 Channel ...
DataSheet: H11A817B3SD datasheetH11A817B3SD Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Output Type: Transistor
Supplier Device Package: 4-SMD
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Vce Saturation (Max): 200mV
Current - DC Forward (If) (Max): 50mA
Voltage - Forward (Vf) (Typ): 1.2V
Current - Output / Channel: 50mA
Voltage - Output (Max): 70V
Series: --
Input Type: DC
Rise / Fall Time (Typ): 2.4µs, 2.4µs
Turn On / Turn Off Time (Typ): --
Current Transfer Ratio (Max): 260% @ 5mA
Current Transfer Ratio (Min): 130% @ 5mA
Voltage - Isolation: 5300Vrms
Number of Channels: 1
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Optoisolators are optoelectronic semiconductor devices which provide electrical isolation between an input and output circuits. They are an important component in signal transmission and control of power circuits. Transistor, photovoltaic output optoisolators, covered by IEC 60747-5-5, are among the most common type of optoisolators. The H11A817B3SD is a photoresistor opto-isolator that integrates two components, a transistor output phototransistor and a silicon photovoltaic diode, into a low power package.

The H11A817B3SD has a wide range of applications in the sciences, industrial systems, and other commercial and consumer control systems. Its main advantages are its low power consumption, high isolation voltage up to 5000 Vrms, and low capacitance. It also has a fast response time, wide bandwidth, and a reliable long life. In terms of power consumption, the H11A817B3SD uses only 5 mW of power.

The H11A817B3SD has a two-stage design with a phototransistor output stage and a silicon photovoltaic diode output. The output stage is connected to the input stage by an integrated silicon-presence detector, which detects the presence of a light source. When the photoresistor detects a light source, it activates the phototransistor, which then conducts the current from the input power source to the output. The output current can also be adjusted depending on the input voltage.

The working principle of the H11A817B3SD is that the photoresistor detects a light source, and then the phototransistor is activated. The output stage, consisting of a photodiode and photo-transistor pair, reads and converts the output current into a low voltage signal. This signal is then sent to the output stage, where the output voltage is controlled.

The H11A817B3SD has a wide range of applications in industrial systems and in the sciences. It is often used in industrial systems to control and regulate signal transmission, as well as to provide electrical isolation between circuits. It is also used in the sciences to measure the intensity of light sources, detect the presence of a light source, and to provide electrical isolation between electronic components.

The H11A817B3SD is an important optoelectronic component in industrial systems and in the sciences. Its advantages include low power consumption, high isolation voltage, low capacitance, fast response time, wide bandwidth, and a reliable long life. With its wide range of applications, it is an essential part of many industrial and scientific systems.

The specific data is subject to PDF, and the above content is for reference

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