H11B1300 Allicdata Electronics
Allicdata Part #:

H11B1300-ND

Manufacturer Part#:

H11B1300

Price: $ 0.00
Product Category:

Isolators

Manufacturer: ON Semiconductor
Short Description: OPTOISO 5.3KV DARL W/BASE 6DIP
More Detail: Optoisolator Darlington with Base Output 5300Vrms ...
DataSheet: H11B1300 datasheetH11B1300 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Output Type: Darlington with Base
Supplier Device Package: 6-DIP
Package / Case: 6-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Vce Saturation (Max): 1V
Current - DC Forward (If) (Max): 100mA
Voltage - Forward (Vf) (Typ): 1.2V
Current - Output / Channel: --
Voltage - Output (Max): 25V
Series: --
Input Type: DC
Rise / Fall Time (Typ): --
Turn On / Turn Off Time (Typ): 25µs, 18µs
Current Transfer Ratio (Max): --
Current Transfer Ratio (Min): 500% @ 1mA
Voltage - Isolation: 5300Vrms
Number of Channels: 1
Part Status: Obsolete
Packaging: Tube 
Description

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H11B1300 application field and working principle

Optoisolators - Transistor, Photovoltaic Output is one type of optoisolators that find its application in various industrial processes. The H11B1300 is a 6-pin, dual-in-line, 4-channel, photovoltaic output phototransistor optoisolator designed for voltage isolation and temperature stability. This brief overview introduces the application field and working principle of the H11B1300.

H11B1300 Application Field

The H11B1300 can be used in various industrial processes, including factory automation, computer systems, test and measurement systems, data communication systems, and consumer product applications. This optoisolator is also suitable for use as a communication link-up device between physically separated circumstances. Its voltage isolation, temperature stability, wide temperature range and discrete mounting features make the H11B1300 an ideal choice for many applications.

H11B1300 Working Principle

The H11B1300 phototransistor optoisolator is constructed by sandwiching an LED, a gallium arsenide infrared phototransistor, and a nitride-oxide-semiconductor (NOS) detector inside a double-in-line package. The LED on the input side is the active element and is responsible for producing the infrared light when it receives an electrical signal. This light is then sensed by the gallium arsenide phototransistor, which produces the required output signal. This optoisolator uses an internal NOS detector to prevent the switching voltage of the phototransistor from exceeding the specified limits.

The H11B1300 application field and working principle have been comparatively easy to understand. It features voltage isolation, temperature stability, and a wide temperature range. It also provides discrete mounting for maximum reliability in various industrial processes. The H11B1300 is a versatile optoisolator and is suitable for use in a variety of applications. This information should help understand how the H11B1300 works and evaluate its suitability for various applications.

The specific data is subject to PDF, and the above content is for reference

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