Allicdata Part #: | HCT802TXV-ND |
Manufacturer Part#: |
HCT802TXV |
Price: | $ 35.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | TT Electronics/Optek Technology |
Short Description: | MOSFET N/P-CH 90V 2A/1.1A SMD |
More Detail: | Mosfet Array N and P-Channel 90V 2A, 1.1A 500mW Su... |
DataSheet: | HCT802TXV Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 32.49000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 90V |
Current - Continuous Drain (Id) @ 25°C: | 2A, 1.1A |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 70pF @ 25V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, No Lead |
Supplier Device Package: | 6-SMD |
Description
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HCT802TXV is a special type of transistor array which has the capability to amplify one or more signals. The structure of this transistor array consists of a monolithic plastic-encapsulated device which contains a matrix of twelve field-effect transistors (FETs). This array includes both single-gate FETs and double-gate FETs. It also includes both p-channel enhancement-mode FETs and n-channel enhancement-mode FETs. Due to its unique design, it is ideal for digital signal applications, or where multiple input/output signals are required.The HCT802TXV contains four different types of transistors which are arranged in a matrix. The four types of transistors that can be found in this array are the following: the P-channel enhancement-mode FET, the N-channel enhancement-mode FET, the single-gate FET, and the double-gate FET. The first two mentioned types of transistors are designed for signal amplification because they have an unusually high voltage-gain capability. The single-gate FETs are used to provide voltage gain and current gain, as well as current source capability. Finally, the double-gate FETs are mainly used to provide current and voltage gain, as well as signal inversion and digital control.The HCT802TXV works by amplifying digital signals that are passed through its transistor array. The digital signal is sent to the logic circuit which consists of a resistor- and transistor-based circuit. This logic circuit then amplifies the signal and passes it on to the next stage. The signal is then passed through the FETs in the transistor array, where it is amplified. The output from the HCT802TXV is then passed to the output port.The HCT802TXV is widely used in various digital and audio applications such as digital audio processors, digital signal processing, audio preamplifiers, and so on. Furthermore, it can also be used in applications where multiple input/output signals are required. This makes it an ideal choice for amplifying and controlling a variety of digital signals.This transistor array has many advantages, such as high gain and current sources, plus it is relatively easy to set up and use. Furthermore, the HCT802TXV has a high level of immunity to noise and interference – making it ideal for applications where there is a high level of noise. Additionally, due to its compact size, this transistor array can be used in smaller, portable devices.In conclusion, the HCT802TXV is a highly reliable, efficient, and powerful transistor array, which is ideal for digital signal applications, or where multiple input/output signals are required. Due to its high voltage-gain capability, as well as its small size, this device is a perfect fit for various audio-related applications. Furthermore, the HCT802TXV can provide high immunity to noise and interference, making it a great choice for more sensitive digital systems.
The specific data is subject to PDF, and the above content is for reference
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