Allicdata Part #: | HERF1004GC0G-ND |
Manufacturer Part#: |
HERF1004G C0G |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ARRAY GP 300V ITO-220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 300V 10... |
DataSheet: | HERF1004G C0G Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.19184 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io) (per Diode): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 300V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
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HERF1004G C0G application field and working principle are the salient attributes of a rectifying diode array. The HERF1004G diodes array offers excellent temperature compensate characteristics and low temperature coefficient. It consists of five individual diodes connected together in an IC package. The diodes array is especially suitable when multiple diode rectification of large AC to DC currents is required.
An array of rectifying diodes must allow large currents to pass through while simultaneously providing reverse voltage protection. To do this, each diode must have a PN junction capable of withstanding large voltages and current. These characteristics depend on the materials used in manufacture and the semiconductor band structure.
Each HERF1004G diode is constructed from a PN junction with N and P type layers, respectively. N-type layers contain an excess of electrons (or negative charge carriers), while P-type layers contain an excess of holes (positive charge carriers). When a voltage is applied, electrons flow from the N-type layer to the P-type layer, creating an electric current.
Each diode has two terminals, called the anode and the cathode. When the voltage is applied in the forward condition, the anode becomes positive and the cathode becomes negative. The electrons flow through the diode in the forward direction, meaning that the current will always flow in the same direction. This is referred to as rectification and is the main purpose of using a diode array.
In reverse bias, the polarity of the voltage is reversed and the current flow is blocked. This prevents any unwanted current from flowing back into the circuit, protecting the rest of the components from damage due to overvoltage.
HERF1004G diodes array have excellent temperature coefficient performance and feature a low resistance area for efficient current switching. They can be used in AC to DC converters, power supplies, voltage stabilizers, and range from 0.6A to 20A.
Using the HERF1004G diode array, you can expect to find efficient diode rectification of large AC to DC currents with excellent temperature coefficient characteristics and low temperature coefficient. This makes them ideal for use in demanding circuit applications where power supplies and voltage stabilization are essential.
The specific data is subject to PDF, and the above content is for reference
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