Allicdata Part #: | 1127-3235-ND |
Manufacturer Part#: |
HMC1087F10 |
Price: | $ 357.89 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | POWER AMP 2-20GHZ INGAP |
More Detail: | RF Amplifier IC Radar 2GHz ~ 20GHz 10-SMT |
DataSheet: | HMC1087F10 Datasheet/PDF |
Quantity: | 24 |
1 +: | $ 325.35700 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Frequency: | 2GHz ~ 20GHz |
P1dB: | -- |
Gain: | 11dB |
Noise Figure: | -- |
RF Type: | Radar |
Voltage - Supply: | 28V |
Current - Supply: | 850mA |
Test Frequency: | 2GHz ~ 20GHz |
Package / Case: | 10-SMD Module |
Supplier Device Package: | 10-SMT |
Base Part Number: | HMC1087 |
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RF amplifiers are essential components found in many different types of electronic systems. The HMC1087F10 is a high performance RF amplifier developed by Acbel Polytech Inc. This amplifier utilizes semiconductor fabrication processes and can offer a wide variety of performance characteristics including high gain, low noise and low power consumption. In this article, we will go over the application fields and working principle of the HMC1087F10.
The HMC1087F10 is a high gain, low noise and low power consumption RF amplifier. It can be used in a variety of applications such as cellular systems, WLAN, Bluetooth, satellite systems and other wireless communication systems. The key features of this amplifier include a wide dynamic range, low distortion, high efficiency and reliable performance.
The HMC1087F10\'s core is comprised of all-silicon bipolar complimentary metal oxide semiconductor (CMOS) technology and a combination of SiGa/SiGe/SOI BiCMOS processes. This IC is intended for applications that require a high degree of integration and excellent performance. Its operating voltage range is +3V to +5V.
The HMC1087F10 has two active devices that work together in series: a depletion gate field-effect transistor (FET) and a common-source amplifier. The FET is used to control the amplifier\'s small-signal gain, while the common-source amplifier provides the required signal gain. The FET is biased to a high pinch point voltage, which ensures low noise operation. The drain of the FET is connected to the gate of the common-source amplifier, and the common-source amplifier is feedback-compensated. This creates a non-linear signal processing stage that is able to provide high linearity and high gain.
The HMC1087F10 also includes bias circuitry and other features that reduce both offset voltage and power consumption. The amplifier has a wide common-mode voltage range of 0V to +12V, which allows it to be used in a wide range of applications. It also features a low noise figure of -90dBc, making it suitable for use in systems requiring low noise.
The HMC1087F10 is a fully integrated RF amplifier designed for high robustness and low power consumption. It is suitable for use in a wide variety of RF applications and provides excellent performance characteristics. The combination of its high gain, low noise and low power consumption make it an ideal solution for wireless communication systems.
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