
HMC1099LP5DETR RF/IF and RFID |
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Allicdata Part #: | 1127-3501-2-ND |
Manufacturer Part#: |
HMC1099LP5DETR |
Price: | $ 59.43 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC PWR AMP 0.0-1GHZ 12W 32SMD |
More Detail: | RF Amplifier IC Radar 1.1GHz 32-LFCSP (5x5) |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 54.02080 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Frequency: | 1.1GHz |
P1dB: | -- |
Gain: | 20dB |
Noise Figure: | 8dB |
RF Type: | Radar |
Voltage - Supply: | 28V |
Current - Supply: | 100mA |
Test Frequency: | 1.1GHz |
Package / Case: | 32-LFQFN Exposed Pad, CSP |
Supplier Device Package: | 32-LFCSP (5x5) |
Base Part Number: | HMC1099 |
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RF amplifiers play an increasingly important role in modern communications technology, and one of the most popular RF amplifiers available is the HMC1099LP5DETR—an amorphous, high gain, medium power RF amplifier that covers the frequency range from DC to 64 GHz. This versatile RF amplifier is specifically designed to operate in demanding environments, making it an ideal choice for a wide range of applications.
The HMC1099LP5DETR utilizes Avalanche Transit Time (ATMEL) technology to achieve high gain with moderate power output and linear characteristics. This device can also be used with GaAs transistors for increased power output and fast switching times. The device is also capable of handling multiplexed signals and wideband noise compensation.
The HMC1099LP5DETR is ideally suited for use in a variety of applications, including high power amplifiers, direct broadcast satellite systems, cellularbase stations, WiMAX, wireless local area networks, radar systems, and personal communicators. The device can also be used as an amplifier in digital switching networks, as a small-signal amplifier in wireless headset systems, and in various Test-and-Measurement applications.
In terms of its working principle, the HMC1099LP5DETR utilizes a standard design featuring high frequency transistors as its active power source. These transistors are connected in an amplifying circuit to maximize the signal gain, and the transistors are supplied with a low amount of bias to prevent the amplifier from operating at too high a power output. The amplifier is also designed to reject any interference or noise that may affect the signal.
In order to further increase the performance of the device, the HMC1099LP5DETR features a variety of options for impedance matching. These include the use of MOS capacitors, baluns, directional couplers, and resistive dividers. Through proper use of these components, the device is capable of vastly improving the performance of high power amplifiers.
Finally, the HMC1099LP5DETR is capable of operating in a wide range of temperatures, from -40°C to 85°C. This makes the device suitable for use in a variety of environmental conditions, such as in high humidity or near salt water. As a result, the HMC1099LP5DETR is an ideal choice for a variety of RF amplifier applications.
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