HMC427LP3ETR RF/IF and RFID |
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Allicdata Part #: | 1127-1383-2-ND |
Manufacturer Part#: |
HMC427LP3ETR |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC TRANSFER SWITCH 8GHZ 16-QFN |
More Detail: | RF Switch IC VSAT 8GHz 50 Ohm 16-SMT (3x3) |
DataSheet: | HMC427LP3ETR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Test Frequency: | 8GHz |
Base Part Number: | HMC427 |
Supplier Device Package: | 16-SMT (3x3) |
Package / Case: | 16-VFQFN Exposed Pad |
Operating Temperature: | -40°C ~ 85°C |
Voltage - Supply: | 5V |
Impedance: | 50 Ohm |
Features: | -- |
IIP3: | 43dBm |
P1dB: | 26dBm |
Series: | -- |
Insertion Loss: | 1.6dB |
Isolation: | 32dB |
Frequency Range: | 0Hz ~ 8GHz |
Circuit: | -- |
Topology: | Absorptive |
RF Type: | VSAT |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HMC427LP3ETR is a 4-bit, high-isolation switch, designed for use in high-performance RF applications. It is composed of four SPDT (single-pole double-throw) switches and four termination network integrated on a single chip. This device provides an easy to use, high-isolation, low-pin-count RF switch solution.
The HMC427LP3ETR utilizes the most advanced semiconductor process technologies available for superior RF performance. The device is available in many flavors of both 0.15-micron CMOS and 0.18-micron CMOS process which includes Hafnium oxide isolated transistors. It also makes use of metal over-molding packages to further enhance its performance. This device is designed to operate from either a single supply voltage or dual supply voltage.
The HMC427LP3ETR offers superior RF performance, including a low insertion loss, high linearity, high isolation, and fast switching speed. The device features a maximum insertion loss of 1 dB typical, a VSWR of 1.2:1 maximum and an isolation ofTypical – 30 dB @ 500 MHz. The device offers an operating frequency band of DC to 2 GHz, with many performance ranges available from low frequencies to high frequencies.
The HMC427LP3ETR can be used in a variety of RF applications. It can be used as a low noise amplifier switch, mixer switch, oscillator switch, tuner switch and more. It is also suitable for digital RF applications such as low-IF receiver designs and FDD transmitter designs. The device can also be used for antenna switching and signal routing in multi-input transmitters.
The working principle of the HMC427LP3ETR is based on PIN diode switching. It uses PIN diode control voltage to switch between input and output terminals. When the voltage applied to the PIN diode exceeds its reverse breakdown voltage, the diode is turned on and a conducted path is established between the input and output terminals. As the voltage applied to the PIN diode is lowered below its reverse breakdown voltage, the PIN diode is turned off and the conducting path is cut off. The HMC427LP3ETR provides an easy to use, high-isolation, and low-pin pin-count RF switch solution.
The HMC427LP3ETR is suitable for a wide range of RF applications and provides superior RF performance. This device provides an easy to use, low-pin-count RF switch solution with low insertion loss, high linearity, high isolation, and fast switching speed. The device is available in various flavors of 0.15-micron CMOS and 0.18-micron CMOS process with Hafnium oxide isolated transistors. This makes it an ideal choice for high-performance RF switching applications and is suitable for many digital high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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