HMC475ST89

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HMC475ST89, a 3-stage, 60mA, 40V monolithic HBT power amplifier, is widely applied in RF amplifiers.

The HMC475ST89 demonstrates good performance in the broadband or narrowband applications for both linear and saturation operation, from 1GHz to 6GHz. The amplifier is built using GaAs HBT technology and combines superior power levels, high linearity, excellent gain, and good intermodulation performance. Furthermore, it offers adjustable bias currents, temperature stability is excellent over the industrial temperature range, and is packaged in a convenient and space saving 8-lead LLP.

It operates in two modes: linear and saturation mode. Linear mode is the traditional operation in which large-signal linearity is the driving factor, while the saturation mode provides maximum gain and power. In linear mode, the device operates from a quiescent bias of 10mA per stage with a supply voltage of 30V, and a drain-source voltage (Vds) of 22V with a bias voltage of -8V. The gain and efficiency of the device in the linear mode are quite good, with a maximum gain of 17.6dB and an efficiency of 47%.

The device can also be operated in a saturated mode. In this mode, the bias voltage is adjusted to -2V, the drain source voltage (Vds) is 35V, and the supply voltage is 40V. The gain and efficiency in saturated mode are improved over the linear mode, with a gain of 22.4dB and an efficiency of 62%.

The working principle of the HMC475ST89 is based on the concept of a common-source amplifier circuit. In this circuit, a DC bias is applied to the base of the amplifier, while the input signal is applied to the gate. The DC bias causes the transistor to turn on, and the input signal causes the transistor to modulate the current flow in the circuit. This modulated current flow is then amplified and sent to the drain of the amplifier. The amplified signal is then sent to the output of the amplifier.

The output of the amplifier is sensitive to the load impedance, which can affect the output power and gain. In order to avoid this, an impedance-matching network is used. This is necessary to optimize the power and gain of the amplifier. The impedance-matching network is usually realized by a capacitive or inductive network that is connected to the output of the amplifier.

HMC475ST89 is a small signal RF amplifier and is widely used in various applications such as high linearity amplifiers, replacement for conventional GaAs MMICs, microwave amplifiers, and other RF applications. Due to its superior linearity, power, gain, and efficiency, it is widely adopted for many RF amplification needs.

In conclusion, HMC475ST89 is an excellent device for RF amplifiers with superior linearity, power, gain, and efficiency. Its wide operating frequency range of 1GHz to 6GHz and adjustable bias currents make it suitable for most RF applications. It also comes in a convenient and space-saving 8-lead LLP package for easier and cost-effective implementation.

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