| Allicdata Part #: | 1127-3688-2-ND |
| Manufacturer Part#: |
HMC434SRJZ-EP-R7 |
| Price: | $ 7.91 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | EP INGAP HBT DIVIDE-BY-8 |
| More Detail: | RF IC Prescaler WLAN SOT-23-6 |
| DataSheet: | HMC434SRJZ-EP-R7 Datasheet/PDF |
| Quantity: | 3000 |
| 500 +: | $ 7.18921 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Function: | Prescaler |
| RF Type: | WLAN |
| Secondary Attributes: | -- |
| Package / Case: | SOT-23-6 |
| Supplier Device Package: | SOT-23-6 |
| Base Part Number: | HMC434 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HMC434SRJZ-EP-R7 is a RF Misc ICs and Modules device. It is a medium power, medium gain RoHS compliant GaAs MESFET in surface mount plastic packages. HMC434SRJZ-EP-R7 has been designed for use in high linearity base station, cellular and Global System for Mobile Communications (GSM) applications. With its integrated on-chip self-biased output match, minimal external components are needed for output power and gain over a wide range of frequencies. It therefore provides a significant advantage in critical circuit real estate, power consumption and cost saving.
HMC434SRJZ-EP-R7\'s applicationfield ranges from DC to 4 GHz. The device provides a medium low noise figure and 29 dB of gain. The device also has a power output capability of +41 dBm at 3 dB compression point. The external matching networks for the source and drain bias can all be achieved in-chip with optional external components. HMC434SRJZ-EP-R7 also provides an integrated circuit protection against ESD, from pin-to-case and from subpins to substrate.
The working principle of is implemented by MESFET technology. This involves modulation of the electric field between an insulated gate and a semiconductor channel junction. The gate is used to control the current flow of the electron flow and is referred to as the "controllable source". Using this technology, only a high electric field is required to turn on the device and achieve low power dissipation, high frequency response, low noise and low distortion. The device also features an on-chip output matching network that provides a 50 Ohm drain resistance match, maximizing the power output efficiency and linearity.
In conclusion, HMC434SRJZ-EP-R7 as a RF Misc ICs and Modules device is an ideal solution for many consumer and communications applications. It offers a balance of high gain, low noise figure, good linearity, high power output, wide frequency range and integrated ESD protection. This device can help reduce external components, size and power requirements, making it cost attractive in mass production for wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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HMC434SRJZ-EP-R7 Datasheet/PDF