HMC435MS8GE RF/IF and RFID

Test Frequency:	4GHz
Base Part Number:	HMC435
Supplier Device Package:	8-MSOP-EP
Package / Case:	8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Operating Temperature:	-40°C ~ 85°C
Voltage - Supply:	5V
Impedance:	50 Ohm
Features:	--
IIP3:	45dBm
P1dB:	31dBm
Series:	--
Insertion Loss:	1.5dB
Isolation:	35dB
Frequency Range:	DC ~ 4GHz
Circuit:	SPDT
Topology:	Absorptive
RF Type:	General Purpose
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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RF switches are devices used to selectively connect two points in an electrical circuit using radio frequency (RF) signals. They are commonly used in radio systems, where the signals from an antenna must be routed to multiple receivers. The HMC435MS8GE is one of many RF switch chips designed to perform this function.The HMC435MS8GE is a SP3Tswitch that utilizes Hittite’s core technology to offer superior performance in both insertion loss and isolation. It is fabricated on an advanced SiGe BiCMOS process and is designed to work in the low frequency range up to 6 GHz. The chip is housed in an 8-lead miniature plastic surface mount package, with a switchable input and three active outputs.The HMC435MS8GE is designed for use in a wide variety of applications that require RF switching. It is suitable for base station infrastructure, low power radios, wireless communication test equipment, and other commercial communications systems. Additionally, the HMC435MS8GE is suitable for military and aerospace applications thanks to its superior performance characteristics.In operation, the HMC435MS8GE utilizes a low voltage control signal to switch the connection from an input to one of three active outputs. It is designed to have the outputs be completely independent of each other, with no crosstalk between them. Each output can be switched on or off independently of the other outputs.The HMC435MS8GE operates using a three-step process. First, the control signal is sent to the chip, which sets the input selector to the appropriate output. Second, the RF signal is routed from the input to the desired output. Finally, the signal is amplified at the output.The HMC435MS8GE is designed to handle up to 33 dB of attenuation in insertion loss and 25 dB of isolation. It also has an excellent dynamic range of up to 50 dB, allowing it to perform in high-power applications. Additionally, it can operate at a supply voltage of between 2.7 and 3.4 volts, making it well suited for use in battery operated systems.Overall, the HMC435MS8GE is a highly capable RF switch chip that is designed for use in a variety of different applications. Thanks to its superior performance characteristics, it is suitable for use in commercial, military, and aerospace applications. It is designed to offer excellent isolation, insertion loss, dynamic range, and low voltage operation, making it an ideal solution for many RF switching needs.

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