| Allicdata Part #: | 1127-3693-ND |
| Manufacturer Part#: |
HMC470ATCPZ-EP-PT |
| Price: | $ 0.00 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | EP DIGITAL ATTENUATOR |
| More Detail: | RF Attenuator 1dB ~ 31dB 100MHz ~ 3GHz 500mW 16-... |
| DataSheet: | HMC470ATCPZ-EP-PT Datasheet/PDF |
| Quantity: | 31 |
| Series: | -- |
| Packaging: | Strip |
| Part Status: | Active |
| Attenuation Value: | 1dB ~ 31dB |
| Frequency Range: | 100MHz ~ 3GHz |
| Power (Watts): | 500mW |
| Package / Case: | 16-VFQFN Exposed Pad |
| Base Part Number: | HMC470 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Attenuators are electronic devices used to reduce or control the magnitude of a signal without distorting its waveform. They are typically fixed but can also be variable, and are often used to reduce the amplitude of a signal before it is sent to an amplifier or other circuit components, or even to reduce the signal to a usable level in a transmission line. The HMC470ATCPZ-EP-PT is a 50 ohm GaAs Phemt 2-bit digital attenuator, which provides a wide range of attenuation values at 6 GHz. This attenuator is suitable for a variety of applications, including in more complex microwave circuits and systems.
The HMC470ATCPZ-EP-PT is designed to reduce the level of input signals while maintaining excellent linearity and low input return loss. It is ideal for certain applications, such as amplifying received signals before they enter the receiver, or attenuating a signal before feeding an amplifier. The device can also be used in antenna systems, base stations, and various communication systems. It is available in a small package that is suitable for dense circuit board layouts.
The HMC470ATCPZ-EP-PT operates on an input signal with a frequency range of 0.2 to 6 GHz, using a control voltage ranging from +3 to –3V. It has a maximum attenuation of 31.75 dB and a precisely controlled step size of 0.25 dB, allowing for an exact amount of attenuation. It also features low control voltage insertion and low distortion at high linearity, ensuring a clean output signal with minimal distortion.
The device works using GaAs HBT Technologies. This technology consists of creating thin wafers of Gallium Arsenide (GaAs) material. These wafers are then cut into a channel pattern to fabricate a “junction field effect transistor” (JFET). In this way, the transistor is created by forming a junction between two different types of material. The Phemt technolgoy is similar to the GaAs HBT technology but employs different material in the fabrication of the transistors.
The HMC470ATCPZ-EP-PT is a two-bit high power attenuator that works using a one-bit logic design, making it easy to control. It also features excellent signal performance with low distortion, low insertion loss, and high linearity. These features make the device perfect for a range of applications, such as RF, microwave, antenna, and base station applications.
The device also features electromagnetic compatibility emissions, as well as low power consumption, making it an ideal choice for systems that rely on low power consumption. Additionally, the device is protected against faults and transient conditions, allowing it to operate reliably in difficult environments.
In summary, the HMC470ATCPZ-EP-PT is a GaAs Phemt 2-bit digital attenuator suited for a variety of applications, such as RF amplification, antenna systems, and communications systems. It offers superior signal linearity and power efficiency, as well as protection against faults and transient conditions. With its small form factor, it is ideal for use in dense circuit board layouts.
The specific data is subject to PDF, and the above content is for reference
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HMC470ATCPZ-EP-PT Datasheet/PDF