HMC414MS8GE

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RF Amplifiers

HMC414MS8GE is an RF amplifier produced by Hittite Microwave Corporation. As a self-contained amplifier, it features an unmatched performance over the entire 8 to 14 GHz frequency range. It has typical gain of 26 dB, input IP3 of 33.0 dBm, and provides an output IP3 of 43.5 dBm. The amplifier has low-noise figure, high gain and good linearity. In addition, the device also consumes very low current, making it suitable for portable applications.

Application Fields:

• Synthetic aperture radar (SAR)
• Telemetry
• Ground-to-air communication
• Space communication
• Advanced tracking applications

Working Principle:

HMC414MS8GE is a self-contained amplifier. It has a GaAs HEMT (High Electron Mobility Transistor) that consists of two transistors internally, which are named the active device and a bias device. The active device is responsible for producing power while the bias device is responsible for controlling the active device.

The device operates in two modes: linear mode and saturation mode. In linear mode, the HEMT device operates in the linear region, in which it provides a transconductance that is proportional to the input signal volts. Thus, the current through the device is proportional to the input voltage, resulting in a linear output response. At higher input signal levels, the device operates in the saturation region, which produces higher power output. As a result, the output signal is amplified.

The amplifier also has a temperature-compensating bias circuit that allows it to maintain a constant gain over a wide operating temperature range.

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