HMC618LP3E RF/IF and RFID

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The HMC618LP3E is a high-performance gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) amplifier module from Hittite Microwave Corporation. The device provides excellent linearity and wide bandwidth performance. The HMC618LP3E is ideally suited for low noise amplifier, driver amplifier, to output stages, wideband amplifier as well as gain block applications in the frequency range of 2 to 20 GHz.

The HMC618LP3E is available as an 18-lead 3 mm × 3 mm ceramic leadless package (CLP). It requires a simple three-terminal bias of +4V, -2V, and 0V power supply. The amplifier is designed to operate across a very wide temperature range (-55 to +85°C) and provides a typical gain of 16dB at 4GHz in the E-band.

Application Field of HMC618LP3E

The HMC618LP3E amplifier from Hittite Microwave Corporation can have varied applications. It provides excellent linearity and dynamic range performance for point-to-point radios, satellite communication systems, VSATs, test and measurement equipment, radar and electronic warfare systems and many more. It can be used as a low noise amplifier (LNA), driver amplifier, and output stages, or as a wide band amplifier. The module is also capable of being used as a gain block in the frequency range of 2 to 20 GHz.

The HMC618LP3E amplifier is very useful in applications which demand a compact form factor and advantages of high linearity in the wide frequency band. The amplifier can be used as an input stage of a transmit chain, downconversion mixer and provides high output power dynamic range.

Working Principle of HMC618LP3E

The primary operational principle of the HMC618LP3E is known as RF amplification or microwave amplification. This device works by using the electrical signals in the frequency range of 2 to 20 GHz in the form of an electrical signal or current which is then amplified by a voltage-controlled current. A voltage input is applied to the amplifier’s base which in turn regulates the current. On a broader level the amplifier’s base acts like a resistor and the current is simply a voltage drop across the amplifier’s base.

The working principle of HMC618LP3E is tied to the gain and linearity performance of the amplifier. The amplifier’s gain is directly proportional to the current flowing through it and therefore amplifies the input RF signal. The linearity of the amplifier is also dependent on the current flowing through it, which in turn affects the linearity of the amplifier.

The HMC618LP3E amplifier provides high linearity and gain making it suitable for a wide range of application where high linearity is a must, such as satellite communication systems, VSATs, and radar systems. The device also provides excellent dynamic range with a 16dB typical gain at 4GHz in the E-band.

Conclusion

The HMC618LP3E is a high-performance GaAs MMIC amplifier module from Hittite Microwave Corporation specifically designed for applications demanding a wideband amplifier. The HMC618LP3E amplifier offers high linearity and dynamic range with a typical gain of 16dB at 4GHz in the E-band. The amplifier can be used as a low noise amplifier, driver amplifier, gain block, output stages, and wideband amplifier over the frequency range of 2 to 20GHz, making it ideal for point-to-point radios, satellite communication systems, VSATs, test and measurement equipment and many more.

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