HMC635LC4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF amplifiers are designed to boost weak signals and supply them to receiving or transmitting antennas. A good RF amplifier relies heavily on its design and components; HMC635LC4 is one such amplifier. It is designed and manufactured by Hittite Microwave Corporation. This amplifier has been designed to work in applications like wireless infrastructure, aerospace and defense, and so on.

The HMC635LC4 is a high-performance Class AB gallium arsenide amplifier designed for wideband operation at low-noise signal levels. It features low noise figure, gain flatness over frequency, high output IP3, and wideband operation from 200MHz to 18GHz. With bias current controlled via a logic pin, the HMC635LC4 amplifier provides a gain of up to 12.5dB. It can be used in linear-amplifier configurations as well as in oscillator and amplifier stages.

When it comes to the working principle of the HMC635LC4 amplifier, it begins with the input of a signal which is either an RF signal or a dc voltage. The signal is amplified by the transistors in the amplifier and sent to the output. Depending on the required output power, this signal is further amplified by the input transistors and finally sent to the output.

HMC635LC4 amplifiers are suitable for numerous applications including cellular base stations and repeaters, VSAT, WiMAX, Wi-Fi, LMDS, UHF/VHF transceivers, and test instrument systems. It can be used in receivers, transmitters, and preamplifiers. It can also be used in low noise amplifier, medium power amplifier, and power amplifier in oscillators and amplifiers.

HMC635LC4 amplifiers have all the features necessary for a high performing RF amplifier. It helps in boosting the weak signals and providing them to the receiving or transmitting antennas, which increases the signal strength or power. This helps in providing better connectivity in the system. The HMC635LC4 is also suitable for multiple applications thus making it a great choice for RF amplifiers.

The specific data is subject to PDF, and the above content is for reference