HMC639ST89ETR RF/IF and RFID

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Frequency:	200MHz ~ 4GHz
P1dB:	22dBm
Gain:	13dB
Noise Figure:	2.5dB
RF Type:	General Purpose
Voltage - Supply:	5V
Current - Supply:	110mA
Test Frequency:	--
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89
Base Part Number:	HMC639

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Introduction
HMC639ST89ETR is a radio frequency (RF) amplifier that is designed for applications involving very high linearity and noise performance. It features an integrated 18 dB gain with a wideband operating frequency range from 0.01GHz to 8GHz. It integrates a number of features for optimal RF signal amplification and low noise performance. This includes an active gate drive, embedded self-biasing and an adjustable pre-amplifier for uniform flat-gain gain across a broad frequency range.
Applications
HMC639ST89ETR is a highly efficient and reliable wideband RF amplifier which is designed to meet the most demanding requirements for low distortion, low noise and high linearity. It has a range of applications in radio communications, cellular, satellite, point-to-point, radio broadcast, and instrumentation applications. It is also commonly used in applications like LTE, WiMAX, Bluetooth, WLL, radio base stations, and automotive electronics.
Working Principle
The working principle of HMC639ST89ETR is based on the differential amplification of RF signals. The amplifier adopts an approach of “differential cascode” to provide excellent linearization and noise performance. First, the differential pairs of transistors receive a differential input which is amplified by two cascode amplifying stages. The second stage further amplifies the signal and passes it to the next amplifier stage. The output driver stage gives the amplifier power to drive the final load. The output driver stage consists of two transistors that are connected in a cascode manner. This stage helps to control the output voltage swing of the amplifier and increases its linearity. The differential transistors are biased by an adjustable current source and a voltage reference. With the use of these two components, the amplifier’s bias point can be adjusted, and the power level to output can be modified. The active gate drive enables the driver stage to operate with high linearity and low-power consumption.
Conclusion
The HMC639ST89ETR is a next-generation RF amplifier that offers superior linearity and wideband operation. With its low distortion, low noise, and high linearity characteristics, it is perfect for a range of demanding applications such as cellular, satellite, and point-to-point radio transmission. Its features include an integrated 18 dB gain, active gate drive, embedded self-biasing, and adjustable pre-amplifier for a uniform flat gain across the operating frequency range. This amplifier is well-suited for use in both linear and non-linear applications.

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