Allicdata Part #: | HMC6476LP6GETR-ND |
Manufacturer Part#: |
HMC6476LP6GETR |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC AMP MMIC GAAS HEMT |
More Detail: | RF Amplifier IC |
DataSheet: | HMC6476LP6GETR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Base Part Number: | HMC647 |
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RF Amplifiers
A RF amplifier, or radio-frequency amplifier, is a device designed to boost the voltage, power, or both of a RF signal. This is done by converting a signal of a lower amplitude and frequency to one of a higher amplitude and frequency.
The HMC6476LP6GETR amplifier is a high power amplifier designed to achieve excellent gain performance and linearity across a variety of applications. It is designed for wireless infrastructure applications, and provides high gain, low noise figure, and excellent linearity.
Application Fields
The HMC6476LP6GETR amplifier is designed for use in applications such as broadband wireless infrastructure base stations, point-to-point microwave transmission links, and distributed antenna systems operating in the 0.7 to 4.2 GHz frequency range. The amplifier has a gain of 13 dB, a P1dB of 42 dBm, and a noise figure of 2.8 dB.
The HMC6476LP6GETR supports multiple Input and Output (I&O) configurations including differential and single-ended input while offering a single-ended output. It offers adjustable gain control and bias current. The amplifier can be used as a high-gain amplifier, power booster, and driver for a wide range of applications.
The HMC6476LP6GETR amplifier is suitable for applications such as WiFi/WLAN infrastructure, WiMAX, 3G and 4G base stations, public safety networks, and satellite links. It is also suitable for point-to-point applications such as microwave radio links, short-haul multichannel transmission systems, and wireless systems operating in the 2.3 GHz to 3.7 GHz bands.
Working Principle
The HMC6476LP6GETR amplifier operates by using a voltage bias to increase the input impedance of the device, which in turn increases the gain of the amplifier. The amplifier uses an internal voltage bias circuitry to maintain a low operating voltage while still achieving high gain. The amplifier also uses input impedance matching techniques to improve the gain and linearity of the input signal.
The amplifier also uses RF techniques and algorithms to reduce distortion and improve linearity. This includes the use of predistortion algorithms to reduce harmonic distortion and improves intermodulation distortion. The amplifier also employs gain compression algorithms to reduce distortion in large-amplitude input signals.
The HMC6476LP6GETR also utilizes thermal compensation and filtering techniques to reduce self-heating while maintaining linearity. The amplifier is designed with a built-in temperature sensor that monitors the ambient temperature. The temperature sensor is then used to adjust the bias voltage in order to maintain the desired gain and linearity.
Overall, the HMC6476LP6GETR amplifier provides high gain, low noise figure, and excellent linearity across a wide range of applications. It is suitable for use in broadband wireless infrastructure base stations, point-to-point microwave transmission links, distributed antenna systems, and many other applications. With its adjustable gain control and bias current, the HMC6476LP6GETR makes it easy to optimize the performance of any RF amplifier system.
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