HMC6503LS6 Allicdata Electronics
Allicdata Part #:

HMC6503LS6-ND

Manufacturer Part#:

HMC6503LS6

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: POWER AMP 28-37GHZ PHEMT
More Detail: RF Amplifier IC
DataSheet: HMC6503LS6 datasheetHMC6503LS6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Base Part Number: HMC650
Description

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The HMC6503LS6 is a wideband GaAs MMIC distributed amplifier housed in a convenient surface mount package, designed for use in RF amplifiers. A unique combination of linearity and efficiency makes the HMC6503LS6 well suited to many demanding linear and nonlinear amplifier applications. The integrated device provides excellent return loss, gain, power and noise figure performance, making it a popular choice for large-signal and low-noise amplification.

The HMC6503LS6 offers a gain of 18dB and a noise figure of 4.5dB from 50 to 4000MHz, making it an ideal solution for distributed amplifier architectures and low noise amplifier systems. The wide operating frequency range allows it to be used in a wide range of applications, such as distributed amplifier systems, broadband amplifiers, low noise amplifiers, and high-frequency multimedia systems.

The HMC6503LS6 features a very low device noise figure, a high OIP3, and excellent linearity. It also has an excellent linearity at high power levels, making it a good choice for applications requiring higher power levels. The device is also designed with a wide operating temperature range of -40°C to +85°C, making it suitable for both indoor and outdoor environments.

The principle of operation of the HMC6503LS6 is based on the distributed amplifier architecture. The device is designed as a complimentary distributed amplifier, where both the input and output are active stages. The amplifier operates with a supply voltage of 5V and a drain current of up to 8A. The distributed architecture utilizes a single HBT device to provide gain, noise cancellation, input matching, and output matching.

The key features of the HMC6503LS6 are its high gain, low noise, wideband frequency coverage, and excellent linearity. The device also delivers superior overall performance and provides a cost-effective solution for RF amplification in a variety of applications. With its wide operating frequency range, it is suitable for both linear and non-linear applications.

In conclusion, the HMC6503LS6 is a highly integrated GaAs MMIC distributed amplifier, ideal for a wide variety of RF amplifiers. Its wide operating frequency range, low noise figure, and high performance make it an ideal choice for distributed amplifier systems, broadband amplifiers, and low noise amplifiers. With its excellent linearity and high power performance, it is also suited for demanding linear and nonlinear amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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