HMC660LC4B

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The HMC660LC4B is a medium power, GaAs PHEMT MMIC distributed amplifier. It was designed for use in a wide range of RF and microwave systems such as cellular infrastructure, VSAT, point-to-point and point-to-multipoint radios. The HMC660LC4B has been created with a robust design that ensures excellent gain flatness, output power and linearity, making it ideal for applications such as cellular infrastructure, point-to-point radios and point-to-multipoint radios. This device is capable of operating over a broad frequency range from 2 to 8 GHz.

The HMC660LC4B distributed amplifier utilizes a current-starved, cascode architecture to provide maximum gain and superior linearity in the 2 to 8 GHz range. This architecture allows the device to provide exceptional linearity and gain flatness while consuming very low DC current. The HMC660LC4B offers an output power of +19 dBm at 1 dB compression point with an associated gain of 6 dB.

Suitable applications for the HMC660LC4B include cellular infrastructure (GTR, GSM, PCS), point-to-point radios and point-to-multipoint radios (LMDS, 3G). Other applications include VSAT, satcom, WLAN, WiMAX, LTE and other wireless communication systems. The amplifier is ideal for use in medium power, high linearity RF and microwave systems with frequency ranges from 2 to 8 GHz. Additionally, the HMC660LC4B is designed for use with a low voltage supply, which makes it suitable for use in low power applications such as portable and mobile devices.

The HMC660LC4B is designed to provide superior performance while consuming a low amount of current. The device utilizes an internally match and a low voltage biasing circuit to ensure that it consumes only an average of 130 mA during operation. This allows for the use of the HMC660LC4B in very small, portable and mobile devices where space and power consumption are important considerations. The device also includes an on-chip power detector which helps to regulate the amplifier bias, ensuring superior performance even in highly dynamic environments.

The HMC660LC4B is packaged in a 4mm x 4mm surface mount package and is designed to be used with a ground-signal-ground (GSG) off-chip matching network. This package is suitable for use in dense board designs, making it ideal for use in low-cost, low-power RF amplifiers. The HMC660LC4B also has built-in features such as low noise, high gain flatness, wide dynamic range and high linearity which make it ideal for use in a wide range of RF and microwave applications.

In conclusion, the HMC660LC4B is a high-performance GaAs PHEMT MMIC distributed amplifier designed for use in a wide range of RF and microwave systems. The device provides maximum gain and superior linearity while consuming a low amount of current. The device utilizes an internally match and a low voltage biasing circuit to ensure that it consumes only an average of 130 mA during operation. The HMC660LC4B’s small package and integrated features make it suitable for use in a variety of applications. The device is ideal for cellular infrastructure, point-to-point radios, point-to-multipoint radios, VSAT, satcom, WLAN, WiMAX, LTE and other wireless communication systems over a frequency range of 2 to 8 GHz.

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