HMC747LC3CTR RF/IF and RFID |
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Allicdata Part #: | 1127-3673-2-ND |
Manufacturer Part#: |
HMC747LC3CTR |
Price: | $ 87.45 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC FLIP-FLOP D-TYPE 13GBPS 16SMD |
More Detail: | RF IC Flip-Flop General Purpose 0Hz ~ 14GHz 16-CS... |
DataSheet: | HMC747LC3CTR Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 79.50110 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Function: | Flip-Flop |
Frequency: | 0Hz ~ 14GHz |
RF Type: | General Purpose |
Secondary Attributes: | -- |
Package / Case: | 16-LFCQFN Exposed Pad |
Supplier Device Package: | 16-CSMT (3x3) |
Base Part Number: | HMC747 |
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The HMC747LC3CTR, commonly known as a low noise amplifier (LNA) is a radio frequency integrated circuit (RFIC). It is an active component typically employed in electronic circuits and systems to amplify radio frequency signals. While LNAs can be used in a number of different applications, the HMC747LC3CTR is particularly well suited for signal amplification in high priority downlink systems that require wide operating bandwidth, low noise, and low current operation. Its wide operating bandwidth, low noise figure, and low current, make the HMC747LC3CTR well suited for applications such as low noise Amplifiers, High gain next-generation wireless picocell/wireless LAN receivers, high-gain, high-dynamic range cellular infrastructure receivers, microwave link equipment, and cable television.
The HMC747LC3CTR is a 3-stage monolithic amplifier fabricated using a 0.15 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. It features high gain (127 dB) and low noise (3.3 dB), with low current consumption of only 12.5 mA. In addition, the HMC747LC3CTR has a wide frequency response (−3 dB points extend from 0.75 to 7.8 GHz). The amplifier has an integrated matching network designed for higher efficiency and better overall performance. It is small in size (5mmx4mmx0.87mm) and surface mountable, making it an ideal solution for applications with size constraints.
The HMC747LC3CTR utilizes a direct current (DC) bias supply voltage of 5 volts for its proper operation. The voltage is applied to the gate terminal of the transistor and drives the device in its linear region by increasing the current through it. The input signal is directly applied to the gate and is amplified by the transistor. In the first stage, the input signal is amplified by the transistors, and then amplified further by the two remaining stages. This yields a high gain, low noise amplification of the input signal. The output signal is taken from the source terminal of the last stage.
The HMC747LC3CTR is designed for use in high priority downlink systems, such as low-noise amplifier stages in wireless picocell/wireless LAN receivers, high-gain, high-dynamic range cellular infrastructure receivers, microwave link equipment, and cable television systems. It is an important component in any system that requires wide bandwidth, low noise, and low power consumption. In addition, its surface mountable design makes it suitable for applications that require small components. As such, it is a reliable and cost-effective solution for a variety of high-priority downlink systems.
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