
Allicdata Part #: | HMC7590-ND |
Manufacturer Part#: |
HMC7590 |
Price: | $ 59.64 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC ATTENUATOR DIE |
More Detail: | RF Amplifier IC General Purpose Die |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 54.21620 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Frequency: | -- |
P1dB: | -- |
Gain: | -- |
Noise Figure: | -- |
RF Type: | General Purpose |
Voltage - Supply: | 3.3V |
Current - Supply: | -- |
Test Frequency: | -- |
Package / Case: | Die |
Supplier Device Package: | Die |
Base Part Number: | HMC759 |
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HMC7590 represents a family of high performance Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) amplifiers available in die form at frequencies ranging from DC to over 7GH and with frequencies ranging up to 8GH. It occupies minimal board space and is ideal for wireless, test and measurement, and telecom applications where frequency range, gain and linearity are critical. The device is used in a wide variety of RF amplifier applications in radio communications, radar, electronic warfare, satellite communications and generally any other application in which high performance or high gain are desired.
The HMC7590 amplifier is designed using a process optimized for robust performance up to frequencies beyond 7GHz. It is packaged as a die form, suitable for integration into a variety of applications. The HMC7590 provides high gain, high linearity and wideband operation in a low profile, surface mount package. It has an integrated wideband DC voltage regulator and includes bias blocking capacitors and active bias circuitry for ease in application.
HMC7590 offers small form factor, low noise and high power gain with its excellent internal matching. This amplifier operates with a wide bias range from 4.5V to 30V, with control pins for power adjustment and gain. The low noise performance, high power gain, wide input/output VSWR capabilities, and low group delay make the HMC7590 an ideal solution for high-performance, low-loss RF applications. Additionally, the package has an option of either using an external bias module for increased power gain or a bias tee for voltage control.
The working principle of the HMC7590 gain block is based on the use of an internal phase shifter and an amplifier with automatic gain control. The device has an input terminal and output terminal with two adjustable bias controls, one for biasing the power amplifier and one for automatic gain control. When a signal is applied at the input, the phase shifter will shift the signal\'s phase and amplify the signal to match the output voltage of the amplifier. The amplifier will then adjust the voltage gain to match the output voltage of the phase shifter. The gain is adjusted with the automatic gain control. The output from the amplifier is then taken as the output from the device.
The device operates with a wide frequency range from DC to over 7GHz and with frequencies up to 8GHz. The device also has a high gain of up to 32dB with a flat frequency response between 7GHz and 8GHz. The device is also capable of providing excellent linearity, low noise, high power output and low insertion loss. It is very suitable for use in high frequency and high power applications. This device can also be used in wideband frequency upconverter and downconverter applications.
Overall, the HMC7590 is a great option for high power, high frequency RF amplification applications. It offers robust and reliable performance in a small form factor, and is suitable for a wide variety of RF amplifier applications such as radio communications, radar, electronic warfare, satellite communications and generally any other application in which high performance or high gain are required.
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