
Allicdata Part #: | HMC797-ND |
Manufacturer Part#: |
HMC797 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC POWER AMP DIE |
More Detail: | RF Amplifier IC VSAT 0Hz ~ 22GHz Die |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Frequency: | 0Hz ~ 22GHz |
P1dB: | 28.5dBm |
Gain: | 15.5dB |
Noise Figure: | 3.5dB |
RF Type: | VSAT |
Voltage - Supply: | 10V |
Current - Supply: | 400mA |
Test Frequency: | 18GHz ~ 22GHz |
Package / Case: | Die |
Supplier Device Package: | Die |
Base Part Number: | HMC797 |
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RF amplifiers are key parts of the radio frequency (RF) system. HMC797 is a high-performance active device in the wider technology that helps generate, process and modulate signals. With its wide range of features, it is used in high-power amplifiers, down conversion mixers, linear amplifiers, pre-amplifiers and other electronic systems. This application field and its working principle will be discussed in length in this article.
HMC797 is a dual-pole, high performance GaN HEMT amplifier which operates from 0.8 to 7.8 GHz. It can provide an output power of higher than 64 dBm within a 3 dB compression point. It is also suitable for Doherty architectures and other circuit designs that require high linearity and power performance. With its maximum output power of 66dBm, it has a high-gain performance of greater than 17 dB.
The device contains two active cores with an integrated transformer between them, allowing it to provide excellent high frequency, low noise figure and efficient operation. The internal control of the device is done through an external bias applied to the integrated pulses, ensuring good thermal stability. This input and output impedance matching is achieved through a matching network connected to the active cores.
The working principle of the HMC797 amplifier is based on a two-mode operation which consists of class-A and class-b, allowing it to provide high power output for short durations. In class-A operation, the device is operated in a linear region where the output power is proportional to the input signal power. This mode is used to obtain low noise figure and wide bandwidth response. In class-B, the device operates in an active region where the load line is shifted towards the output side, providing increased power efficiency and output power. This operation is used to achieve high power performance without sacrificing linearity.
It also features a high linearity performance, with it exhibiting a third order intermodulation distortion (IMD3) of lower than -65 dBc for a single-tone input signal. It has an output power of greater than +64 dBm within a 3 dB compression point. Its gain compression performance is also excellent, with a 1 dB compression point of greater than +55 dBm. It also features excellent linearity in its various drain-source configurations. The device is also highly reliable, with it exhibiting high resistance to shock and vibration.
The HMC797 is suitable for a wide range of applications, such as base station and repeater amplifiers, high-power amplifiers, down conversion mixers, linear amplifiers, pre-amplifiers and other electronic systems. It is frequently used in wireless Communication systems, radar systems, Satcoms, Wi-Fi systems, RADAR systems and military and aerospace systems. It is also used in high-frequency instrumentation, device test instruments, medical instruments, instruments for industrial condition monitoring and in other industrial applications.
HMC797 is a very important active device in the RF world, providing excellent performance in both linear and nonlinear characteristics in many electronic systems. Its wide range of features, such as high gain, high linearity, wide bandwidth response, low noise figure and high power output, make it suitable for a variety of applications. The device is highly reliable, and is suitable for use in both commercial and military applications. With its advanced features and functionality, it is expected to continue to be important part of the RF and Electronics world.
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