HMC817LP4ETR Allicdata Electronics
Allicdata Part #:

HMC817LP4ETR-ND

Manufacturer Part#:

HMC817LP4ETR

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC AMP LNA DUAL PHEMT 24-QFN
More Detail: RF Amplifier IC General Purpose 550MHz ~ 1.2GHz 24...
DataSheet: HMC817LP4ETR datasheetHMC817LP4ETR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Frequency: 550MHz ~ 1.2GHz
P1dB: 21dBm
Gain: 16dB
Noise Figure: 0.5dB
RF Type: General Purpose
Voltage - Supply: 3V, 5V
Current - Supply: 95mA
Test Frequency: --
Package / Case: 24-VFQFN Exposed Pad
Supplier Device Package: 24-QFN (4x4)
Base Part Number: HMC817
Description

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RF amplifiers are commonly used devices in many fields. The RF amplifiers have a wide range of applications in telecom, broadcasting, satellites, radar tracking systems, instrumentation systems, and consumer electronics. They are often used to amplify signals in the radio frequency (RF) band. One of the most commonly used RF amplifiers is the HMC817LP4ETR.

Application Fields of HMC817LP4ETR
The HMC817LP4ETR is well suited for use in many applications, including: Wi-Fi, Bluetooth, Industrial, Instrumentation, Security, Radar, Medical, and Avionics. It is an ideal choice for application that requires high efficiency and linearity. The HMC817LP4ETR has a low noise figure and wide dynamic range so it is suitable for signal amplification in a variety of systems. In addition, the HMC817LP4ETR is highly reliable and offers excellent thermal properties.

Working Principle of HMC817LP4ETR
The HMC817LP4ETR is a high power, low noise amplifier. It is based on the principle of RF amplification, which uses an oscillator circuit to generate an electromagnetic wave of a specific frequency. The wave is then fed into a transistor, which amplifies the signal. The amplified signal is then passed through a power amplifier to increase the amplitude of the wave. Finally, the signal is passed through a low noise amplifier to reduce the noise level.

The HMC817LP4ETR utilizes a wideband amplifier topology to maximize efficiency and linearity. It is designed to operate between 1GHz and 2.3GHz and employ a power gain of up to 24dB. The device reduces the power requirements of the base station transmitters, allowing them to operate more efficiently. It also reduces intermodulation distortion, allowing for a more clear signal to be transmitted.

The HMC817LP4ETR has an integrated power detector circuit. This allows the device to monitor the output power in real time, ensuring the signal is always within the required range. The device also employs a temperature compensation circuit to maintain optimal operation over a wide temperature range.

The HMC817LP4ETR is a versatile device that can be used in a variety of applications. It is capable of operating in both linear and nonlinear modes, making it suitable for a wide range of applications. The device is designed to be used in high efficiency and linearity systems, making it a valuable asset for any RF application.

The specific data is subject to PDF, and the above content is for reference

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