Allicdata Part #: | HMC876LC3C-ND |
Manufacturer Part#: |
HMC876LC3C |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC AMP GAAS PHEMT 2A 16QFN |
More Detail: | RF Amplifier IC 16-SMT (3x3) |
DataSheet: | HMC876LC3C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Strip |
Part Status: | Obsolete |
Frequency: | -- |
P1dB: | -- |
Gain: | -- |
Noise Figure: | -- |
RF Type: | -- |
Voltage - Supply: | 3.3V |
Current - Supply: | 13mA |
Test Frequency: | -- |
Package / Case: | 16-LFQFN Exposed Pad |
Supplier Device Package: | 16-SMT (3x3) |
Base Part Number: | HMC876 |
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The HMC876LC3C is a member of Hittite Microwave Corporation\'s (HMC) family of gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) amplifiers. It is an ultra-low noise (1.2 dB noise figure) linear distributed amplifier (LDA) designed to work in the frequency range of 8GHz to 12GHz. The amplifier supports a wide range of applications, particularly those that require high linearity and ultra-low noise performance from 8GHz to 12GHz. Applications include cellular base stations, point-to-point high-speed digital communications, VSATs, and other radio systems and radar applications.
The HMC876LC3C is a high-power, double-balanced Ka-band amplifier that offers both high linearity and low noise performance with a maximum gain of 25 dB and an output power of +25 dBm (5W). The device is fully matched on all ports and can be used as a stand-alone amplifier, or as part of a larger, multistage amplifier chain. The amplifier can be used in many mixed-signal and digital applications, including signal processing, microwave communication, and satellite communications systems.
The HMC876LC3C is a LDA based on the distributed amplifier topology. The double-balanced design is comprised of two equal length, symmetrically spaced, coplanar waveguides with equal impedances. It has two terminals: an input terminal and an output terminal. The input signal is divided equally between the two waveguides, and the signal is amplified by the distributed amplifier, and then recombined at the output terminal. This provides a high gain, high linearity, and low noise performance. The device also has reverse isolation of >25 dB, which prevents signal feedback into the amplifier.
The HMC876LC3C is easy to use and provides low power consumption. It is internally matched on all ports and has no external matching networks. The input and output return losses are greater than 10 dB, while the isolation between ports is greater than 25 dB. The distortion is also very low, with 3rd-order intermodulation distortion (IM3) of -25 dBc. The amplifier can be used as a voltage-controlled amplifier (VCA) by applying mV signals to the control port. The gain of the amplifier can be adjusted over a wide dynamic range.
The HMC876LC3C is an ideal amplifier for use in RF applications that require a high level of linearity and low noise performance. It is particularly suitable for applications in cellular base station, point-to-point high-speed digital communication, VSATs, and other radio systems and radar applications. In addition, it can be used as a VCA in signal processing, microwave communication, and satellite communications systems. With its high linearity and low noise performance, the HMC876LC3C is a highly reliable GaAs amplifier that can be used in a variety of RF amplification applications.
The specific data is subject to PDF, and the above content is for reference
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