HMC876LC3CTR RF/IF and RFID |
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Allicdata Part #: | 1127-2806-1-ND |
Manufacturer Part#: |
HMC876LC3CTR |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC AMP GAAS PHEMT 2A 16QFN |
More Detail: | RF Amplifier IC 16-SMT (3x3) |
DataSheet: | HMC876LC3CTR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Frequency: | -- |
P1dB: | -- |
Gain: | -- |
Noise Figure: | -- |
RF Type: | -- |
Voltage - Supply: | 3.3V |
Current - Supply: | 13mA |
Test Frequency: | -- |
Package / Case: | 16-LFQFN Exposed Pad |
Supplier Device Package: | 16-SMT (3x3) |
Base Part Number: | HMC876 |
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RF amplifiers play an important role in the signal chain. The HMC876LC3CTR is a high dynamic range MMIC medium power amplifier from Analog Device’s family of RF amplifiers. It is designed for use in applications including Cellular/3G, WCDMA, WiMAX, WiBro and LTE base transceiver stations. The device provides 20dB of gain and 32dBm linear output power across the frequency range of 800MHz to 2.7GHz.
The HMC876LC3CTR is designed using Flip-Chip ball grid array (BGA) packaging technology. The device is provided in a compact 5x5mm QFN package, providing a more robust and reliable solution for high-performance applications. It utilizes a patented active biasing switching scheme which provides adjustable gain stages making it perfect for both increased linearity and efficiency.
The HMC876LC3CTR also utilizes analog trimming for selectable linearized gain and optimization of its specified parameters across the entire frequency range. The low current and operating voltage of the device make it suitable for high-density implementations and power-sensitive applications. The device is also selective in the frequency range with a VSWR of 1.9:1 and low reverse isolation.
The HMC876LC3CTR uses a single-ended supply voltage of 1.8V to 5.2V, thus reducing the power dissipation of the device. It also has a low noise figure of 3dB, which results in improved noise performance in a signal chain. The device also features high linearity and low distortion, making it suitable for broadband applications.
The performance of the HMC876LC3CTR is highly dependent on the application circuit. It is essential to use proper RF/microwave design techniques, including RF layout and grounding, for optimizing the performance of the device. It is also important to take into account the effects of thermal dissipation, parasitic inductances and capacitances, as well as component matching when designing the circuit.
In conclusion, the HMC876LC3CTR is a high dynamic range MMIC medium power amplifier that is suitable for use in a wide range of applications. It provides adjustable gain stages and selectable linearization for increased efficiency and performance. The device is also optimized for power-sensitive applications due to its low supply voltage and dissipation. The performance of the device is highly dependent on the design of the application circuit.
The specific data is subject to PDF, and the above content is for reference
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