HMPP-3860-BLK Allicdata Electronics
Allicdata Part #:

HMPP-3860-BLK-ND

Manufacturer Part#:

HMPP-3860-BLK

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE PIN RF SGL 50V 1A MINIPAK
More Detail: RF Diode PIN - Single 50V 1A MiniPak 1412
DataSheet: HMPP-3860-BLK datasheetHMPP-3860-BLK Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 1A
Capacitance @ Vr, F: 0.2pF @ 50V, 1MHz
Resistance @ If, F: 22 Ohm @ 1mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: 0505 (1412 Metric)
Supplier Device Package: MiniPak 1412
Description

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The HMPP-3860-BLK Diode is a type of RF Diode that is used in a number of applications. It is a multi-functional signal-processing and switching device that combines the features of both active and passive components. The device is often used in satellite and aerospace applications, as well as in consumer electronics, communications equipment, and military applications.

The HMPP-3860-BLK Diode is a double-sided NPN diode that is capable of handling high-frequency signals up to 40 GHz. It operates in the frequency range of 0-250MHz. The device has a low RF insertion (I losses), a low failure rate (reflected power & AM/PM conversion loss), higher linearity, higher power handling capability and improved radiation resistance. It also has a low heat sink requirement.

The HMPP-3860-BLK Diode\'s operating principle relies on a pair of negatively biased NPN transistors that are connected in a differential configuration. The positive Node is connected to the positive side of the RF input and the negative Node is connected to the negative side of the RF input. As the voltage across the NPN base-emitter junction increases, an avalanche breakdown occurs and current starts to flow from the Base to the Collector.

When the RF input signal is applied, the voltage across the Base-Emitter junction increases and causes an avalanche breakdown in the differential PNP transistors. This causes the current to flow from the Collector to the Base. This current causes a voltage drop across the Collector-Emitter junction and this voltage change is used to modulate the RF signal.

The HMPP-3860-BLK Diode has a number of advantages. It is reliable, easy to use and highly sensitive to RF transients. The wide temperature range (-40 to +85 degrees Celsius) and vibration-resistant properties make it suitable for use in harsh operating environments. The device also has excellent noise immunity and low insertion loss (I losses). The HMPP-3860-BLK Diode can be used in multi-stage regulation, switching and signal-processing applications, as well as in wireless telecommunications, automotive and high-speed routers.

The HMPP-3860-BLK Diode is well suited for RF applications that require a low-power, high-frequency, high-performance device. It is easy to use, reliable and can offer excellent performance in harsh operating environments. The low insertion loss and wide temperature range make the HMPP-3860-BLK Diode a good choice for both consumer electronics and high-end performance applications.

The specific data is subject to PDF, and the above content is for reference

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