Allicdata Part #: | HMPP-3862-TR1-ND |
Manufacturer Part#: |
HMPP-3862-TR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE PIN GP 50V 1A MINIPAK |
More Detail: | RF Diode PIN - 2 Independent 50V 1A MiniPak 1412 |
DataSheet: | HMPP-3862-TR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - 2 Independent |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 0.2pF @ 50V, 1MHz |
Resistance @ If, F: | 22 Ohm @ 1mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | 0505 (1412 Metric) |
Supplier Device Package: | MiniPak 1412 |
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The HMPP-3862-TR1 is a broadband RF amplifier specifically designed to offer high performance and excellent linearity in the VHF and UHF frequency bands. It is a two-stage amplifier with a low-noise figure and wide gain flatness, enabling it to provide optimum performance in a wide range of applications. The HMPP-3862-TR1 has been designed for the most demanding telecom, military, and other RF applications.
The HMPP-3862-TR1 belongs to the diode-RF category and is ideal for a variety of RF amplifier applications. It utilizes a combination of bipolar and FET technology to achieve its robust gain flatness and low-noise figure. The HMPP-3862-TR1’s wide bandwidth and excellent linearity make it suitable for a variety of applications, including transmitters, receivers, transceivers and other communication systems.
The HMPP-3862-TR1 has a two-stage amplifier architecture consisting of an input stage and a power amplifier stage. The amplifier is capable of providing high linearity and low distortion performance in the VHF and UHF frequency bands. It utilizes two bipolar transistors and one field-effect transistor (FET) in its input stage. The input stage provides high linearity and low distortion, and this is combined with an FET-based power amplifier stage to achieve an excellent gain flatness and wide bandwidth.
The power amplifier stage utilizes the FET transistor for wide bandwidth and high gain. The use of the FET transistor significantly reduces the noise figure of the amplifier, and the power amplifier stage is designed to accommodate a wide range of output power levels. The output power can be easily adjusted via the use of an external attenuator if required.
The HMPP-3862-TR1 is capable of providing an excellent linearity performance across the frequency range, and this makes it suitable for applications where maintaining a constant signal level over a wide frequency range is important. The amplifier is capable of providing linearity performance of up to 0.1dB over its rated bandwidth, which is a significant improvement over traditional transistor-based amplifiers.
The HMPP-3862-TR1 is designed to operate over a wide range of temperatures and conditions, and is suitable for use in harsh environmental conditions. It is designed to operate from -40°C to +85°C, making it suitable for outdoor and high-temperature applications.
In summary, the HMPP-3862-TR1 is an exceptional broadband RF amplifier designed to offer high performance and linearity in the VHF and UHF frequency bands. It utilizes a combination of bipolar and FET transistors along with an excellent gain flatness, low-noise figure, and wide bandwidth to provide excellent performance in a wide range of communications applications. Its wide operating temperature range makes it suitable for harsh environmental conditions, enabling it to be reliably used in a range of outdoor and high-temperature applications.
The specific data is subject to PDF, and the above content is for reference
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