HN1C01FU-GR,LF Discrete Semiconductor Products |
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Allicdata Part #: | HN1C01FU-GRLFTR-ND |
Manufacturer Part#: |
HN1C01FU-GR,LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN 50V 0.15A US6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 15... |
DataSheet: | HN1C01FU-GR,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03804 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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HN1C01FU-GR,LF is a bipolar transistor array integrated circuit (IC). This IC contains sixteen NPN transistors, which are closely interconnected to form a single IC package. The IC is widely used in circuit designers that need to speed up the switching time of transistors in their circuits, as well as reduce the size of the transistors used in the design.
The bipolar transistor array enables the circuit to achieve a higher frequency response than could have been achieved with a single transistor. The IC also reduces the power consumption by providing multiple transistors in a single circuit, thus allowing for longer run times. Furthermore, this IC is capable of going through millions of switching cycles without significant power loss.
The typical application field of HN1C01FU-GR,LF is switching circuits. It is used to replace multiple transistors in order to speed up the response time of the circuit. This IC is also commonly used in driver circuits, such as motor controllers, for its excellent speed and power efficiency.
The integrated circuit operates on bipolar junction transistor (BJT) principles. It is composed of individual transistors which form a single IC package. These transistors are interconnected to form a single circuit, allowing a single negative voltage input to drive multiple transistors at the same time. This enables the circuit to achieve high switching frequencies with only one bias voltage input.
HN1C01FU-GR,LF is designed for easy circuit integration, providing a high level of performance, consistency, and flexibility. It is specifically designed for applications where high frequency and low noise are needed, such as computer systems, digital receivers, and data processing equipment. HN1C01FU-GR,LF is also constructed to be resistant to radiation. This makes it suitable for use in satellite communication systems and other high-radiation environments.
HN1C01FU-GR,LF is a highly versatile integrated circuit which is ideal for circuit designers that demand versatility, speed, and power efficiency. Its superior design and construction make it suitable for a variety of applications, from switch drivers to high-frequency, low-noise processing systems. It is the perfect choice for designers searching for a highly reliable and easily integrated IC package.
The specific data is subject to PDF, and the above content is for reference
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