HN1C01FYTE85LF Discrete Semiconductor Products |
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Allicdata Part #: | HN1C01FYTE85LFTR-ND |
Manufacturer Part#: |
HN1C01FYTE85LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN 50V 0.15A SM6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 15... |
DataSheet: | HN1C01FYTE85LF Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.03969 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
Description
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HN1C01FYTE85LF Arrays are bipolar transistors (BJTs) commonly used in a wide variety of applications. The array consists of four transistors, each with its own collector, base, and emitter connections. The arrays can be used to amplify signals or act as switches, depending on the circuit design.The primary benefit of using an array such as the HN1C01FYTE85LF is the reduction in the number of discrete components required, leading to a smaller and lighter overall circuit design. Additionally, since the transistor array is a single integrated circuit, all of the transistors are closely matched, leading to improved consistent performance and fewer adjustments during the manufacturing process.The HN1C01FYTE85LF incorporates four NPN transistors on a single die, making it a good choice for applications such as switching, audio amplification, and power management. The array has a maximum operating voltage of 80V, a collector current of 15mA, and a DC current gain of 300 (hFE). Each transistor in the array has a base current of 500 micro-amps, a power dissipation of 0.25 Watts, and a breakdown voltage of 5V.The working principle of the HN1C01FYTE85LF transistor array is the same as any other bipolar transistor: with an input current flowing into the base terminal, electrons are attracted from the emitter and then flow into the base to be collected by the collector. The size of the output current is dependent upon the amount of current flowing into the base. By selectively increasing or decreasing the current through the base, the amount of current through the collector can be adjusted to achieve the desired power level.The HN1C01FYTE85LF arrays are typically used in audio amplification, motor control, and power switching applications. For example, they can be used as a switch on a power supply, or to turn off or on a motor based on an input signal. They can also be used as an amplifier, with the input signal controlling the amount of current flowing through the collector. This allows for more efficient amplification of audio signals.The HN1C01FYTE85LF arrays offer superior performance for their cost and are widely used in a variety of applications. Additionally, the fact that the array is a single component makes it easy to install and reduces the time and cost associated with assembly. With its excellent performance, low power dissipation, and versatile design, the HN1C01FYTE85LF arrays are sure to be a popular choice for many different applications.The specific data is subject to PDF, and the above content is for reference
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